CY7C1360C-200BGCT Cypress Semiconductor Corp, CY7C1360C-200BGCT Datasheet - Page 12

• Manufacturer Part Number: CY7C1360C-200BGCT
• Description: CY7C1360C-200BGCT
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C1360C-200BGCT

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous
• Memory Size: 9M (256K x 36)
• Speed: 200MHz
• Interface: Parallel
• Voltage - Supply: 3.135 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 119-BGA
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Partial Truth Table for Read/Write
The Partial Truth Table for Read/Write follows.
Truth Table for Read/Write
The Truth Table for Read/Write follows.
Document Number: 38-05540 Rev. *K
Read
Read
Write byte A – (DQ
Write byte B – (DQ
Write bytes B, A
Write byte C – (DQ
Write bytes C, A
Write bytes C, B
Write bytes C, B, A
Write byte D – (DQ
Write bytes D, A
Write bytes D, B
Write bytes D, B, A
Write bytes D, C
Write bytes D, C, A
Write bytes D, C, B
Write all bytes
Write all bytes
Read
Read
Write byte A – (DQ
Write byte B – (DQ
Write bytes B, A
Write all bytes
Write all bytes
Notes
12. The DQ pins are controlled by the current cycle and the OE signal. OE is asynchronous and is not sampled with the clock.
13. Table only lists a partial listing of the byte write combinations. Any combination of BW
Function (CY7C1360C)
Function (CY7C1362C)
B
C
D
B
A
A
and DQP
and DQP
and DQP
and DQP
and DQP
and DQP
B
D
A
C
A
B
)
)
)
)
)
)
[12, 13]
[12, 13]
GW
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
L
BWE
GW
H
X
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
H
H
H
H
H
H
L
X
is valid. Appropriate write will be done based on which byte write is active.
BW
X
H
H
H
H
H
H
H
H
X
L
L
L
L
L
L
L
L
D
BWE
H
X
L
L
L
L
L
CY7C1360C, CY7C1362C
BW
X
H
H
H
H
H
H
H
H
X
L
L
L
L
L
L
L
L
C
BW
X
H
H
X
L
L
L
B
BW
X
H
H
H
H
H
H
H
H
X
L
L
L
L
L
L
L
L
B
BW
H
H
Page 12 of 34
X
L
L
X
L
BW
A
X
H
H
H
H
H
H
H
H
X
L
L
L
L
L
L
L
L
A
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