CY7C1370D-200AXC Cypress Semiconductor Corp, CY7C1370D-200AXC Datasheet - Page 22

• Manufacturer Part Number: CY7C1370D-200AXC
• Description: IC,SYNC SRAM,512KX36,CMOS,QFP,100PIN,PLASTIC
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C1370D-200AXC

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous
• Memory Size: 18M (512K x 36)
• Speed: 200MHz
• Interface: Parallel
• Voltage - Supply: 3.135 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 100-LQFP
• Density: 18Mb
• Access Time (max): 3ns
• Sync/async: Synchronous
• Architecture: SDR
• Clock Freq (max): 200MHz
• Operating Supply Voltage (typ): 3.3V
• Address Bus: 19b
• Package Type: TQFP
• Operating Temp Range: 0C to 70C
• Number Of Ports: 4
• Supply Current: 300mA
• Operating Supply Voltage (min): 3.135V
• Operating Supply Voltage (max): 3.6V
• Operating Temperature Classification: Commercial
• Mounting: Surface Mount
• Pin Count: 100
• Word Size: 36b
• Number Of Words: 512K
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 428-2137; CY7C1370D-200AXC

Switching Waveforms
Document Number: 38-05555 Rev. *K
Notes
25. For this waveform ZZ is tied LOW.
26. When CE is LOW, CE
27. Order of the Burst sequence is determined by the status of the MODE (0 = Linear, 1 = Interleaved).Burst operations are optional.
In-Out (DQ)
ADDRESS
ADV/LD
Data
CEN
BW
CLK
WE
OE
CE
x
t
t
t
CENS
AS
CES
1
WRITE
D(A1)
is LOW, CE
A1
1
t
t
CENH
t
AH
CEH
2
WRITE
D(A2)
is HIGH and CE
2
A2
t
CH
t CYC
t
t
DS
CL
D(A2+1)
BURST
WRITE
D(A1)
3
3
Figure 5. Read/Write/Timing
is LOW. When CE is HIGH,CE
t
DH
DON’T CARE
D(A2)
READ
Q(A3)
A3
4
D(A2+1)
READ
Q(A4)
A4
5
t
t
CO
CLZ
1
is HIGH or CE
UNDEFINED
Q(A4+1)
BURST
READ
[25, 26, 27]
Q(A3)
6
t
DOH
t
2
OEHZ
is LOW or CE
WRITE
D(A5)
Q(A4)
A5
7
CY7C1370D, CY7C1372D
t
OEV
t
OELZ
3
is HIGH.
Q(A6)
Q(A4+1)
READ
A6
8
t
t
DOH
CHZ
WRITE
D(A7)
9
D(A5)
A7
DESELECT
Page 22 of 29
10
Q(A6)
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