CY7C1370D-200BZI Cypress Semiconductor Corp, CY7C1370D-200BZI Datasheet - Page 22
![IC,SYNC SRAM,512KX36,CMOS,BGA,165PIN,PLASTIC](/photos/18/29/182916/165-fbga_sml.jpg)
CY7C1370D-200BZI
Manufacturer Part Number
CY7C1370D-200BZI
Description
IC,SYNC SRAM,512KX36,CMOS,BGA,165PIN,PLASTIC
Manufacturer
Cypress Semiconductor Corp
Datasheet
1.CY7C1372D-200AXC.pdf
(29 pages)
Specifications of CY7C1370D-200BZI
Format - Memory
RAM
Memory Type
SRAM - Synchronous
Memory Size
18M (512K x 36)
Speed
200MHz
Interface
Parallel
Voltage - Supply
3.135 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
165-LFBGA
Lead Free Status / RoHS Status
Contains lead / RoHS compliant by exemption
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
CY7C1370D-200BZI
Manufacturer:
Cypress Semiconductor Corp
Quantity:
10 000
Part Number:
CY7C1370D-200BZI
Manufacturer:
CYPRESS
Quantity:
20 000
Company:
Part Number:
CY7C1370D-200BZIT
Manufacturer:
Cypress Semiconductor Corp
Quantity:
10 000
Switching Waveforms
Document Number: 38-05555 Rev. *K
Notes
25. For this waveform ZZ is tied LOW.
26. When CE is LOW, CE
27. Order of the Burst sequence is determined by the status of the MODE (0 = Linear, 1 = Interleaved).Burst operations are optional.
In-Out (DQ)
ADDRESS
ADV/LD
Data
CEN
BW
CLK
WE
OE
CE
x
t
t
t
CENS
AS
CES
1
WRITE
D(A1)
is LOW, CE
A1
1
t
t
CENH
t
AH
CEH
2
WRITE
D(A2)
is HIGH and CE
2
A2
t
CH
t CYC
t
t
DS
CL
D(A2+1)
BURST
WRITE
D(A1)
3
3
Figure 5. Read/Write/Timing
is LOW. When CE is HIGH,CE
t
DH
DON’T CARE
D(A2)
READ
Q(A3)
A3
4
D(A2+1)
READ
Q(A4)
A4
5
t
t
CO
CLZ
1
is HIGH or CE
UNDEFINED
Q(A4+1)
BURST
READ
[25, 26, 27]
Q(A3)
6
t
DOH
t
2
OEHZ
is LOW or CE
WRITE
D(A5)
Q(A4)
A5
7
CY7C1370D, CY7C1372D
t
OEV
t
OELZ
3
is HIGH.
Q(A6)
Q(A4+1)
READ
A6
8
t
t
DOH
CHZ
WRITE
D(A7)
9
D(A5)
A7
DESELECT
Page 22 of 29
10
Q(A6)
[+] Feedback