CY7C1460AV25-200BZXC Cypress Semiconductor Corp, CY7C1460AV25-200BZXC Datasheet - Page 28

CY7C1460AV25-200BZXC

CY7C1460AV25-200BZXC

Manufacturer Part Number
CY7C1460AV25-200BZXC
Description
CY7C1460AV25-200BZXC
Manufacturer
Cypress Semiconductor Corp
Datasheet

Specifications of CY7C1460AV25-200BZXC

Format - Memory
RAM
Memory Type
SRAM - Synchronous
Memory Size
36M (1M x 36)
Speed
200MHz
Interface
Parallel
Voltage - Supply
2.375 V ~ 2.625 V
Operating Temperature
0°C ~ 70°C
Package / Case
165-LFBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CY7C1460AV25-200BZXC
Manufacturer:
Cypress Semiconductor Corp
Quantity:
10 000
Document History Page
Document Number: 38-05354 Rev. *G
Document Title: CY7C1460AV25/CY7C1462AV25/CY7C1464AV25 36-Mbit (1 M × 36/2 M × 18/512 K × 72)
Document Number: 38-05354
Pipelined SRAM with NoBL™ Architecture
REV.
*A
*B
*C
*D
*E
**
ECN No.
2898564
303533
331778
417547
473650
254911
Issue Date
See ECN
See ECN
See ECN
See ECN
See ECN
03/24/10
Orig. of
Change
RXU
VKN
SYT
SYT
SYT
NJY
New data sheet
Part number changed from previous revision (new and old part number
differ by the letter “A”)
Changed H9 pin from V
FBGA on Page # 5
Changed the test condition from V
Electrical Characteristics table
Replaced
Packages on the Thermal Resistance Table
Changed I
and 167 Mhz respectively
Changed I
Mhz respectively
Changed I
Changed I
Mhz respectively
Changed I
Changed C
TQFP Package
Changed t
Speed Bin
Added lead-free information for 100 TQFP, 165 FBGA and 209 FBGA
packages
Modified Address Expansion balls in the pinouts for 165 FBGA and 209
FBGA Package as per JEDEC standards and updated the Pin Definitions
accordingly
Modified V
Changed C
FBGA Package
Added Industrial Temperature Grade
Changed I
tively
Updated the Ordering Information by Shading and Unshading MPNs as per
availability
Converted from Preliminary to Final
Changed address of Cypress Semiconductor Corporation on Page# 1 from
“3901 North First Street” to “198 Champion Court”
Modified test condition from V
Changed I
tively and also Changed I
A respectively on page# 19
Modified “Input Load” to “Input Leakage Current except ZZ and MODE” in
the Electrical Characteristics Table
Replaced Package Name column with Package Diagram in the Ordering
Information table
Replaced Package Diagram of 51-85050 from *A to *B
Added the Maximum Rating for Supply Voltage on V
Changed t
AC Switching Characteristics table.
Updated the Ordering Information table.
Removed inactive parts from the ordering information table.Updated
package diagrams.
CO
DD
SB1
SB2
SB3
SB4
SB2
X
TH
OL,
IN
IN
current value in MODE from –5 & 30 A to –30 & 5 A respec-
JA
, t
, C
, C
from 3.0 to 3.2 ns and t
from 450, 400 & 350 mA to 435, 385 & 335 mA for 250, 200
V
from 190, 180 and 170 mA to 185 mA for 250, 200 and 167
from 100 mA to 110 mA for all frequencies
from 80 mA to 100 mA for all frequencies
from 180, 170 & 160 mA to 160 mA for 250, 200 and 167
and I
TL
and
OH
CLK
CLK
from 25 ns to 20 ns and t
test conditions
SB4
and C
and C
JC
SSQ
from 100 and 110 mA to 120 and 135 mA respec-
from TBD to respective Thermal Values for All
Description of Change
X
I/O
I/O
current value in ZZ from –30 & 5 A to –5 & 30
to V
to 6.5, 3 and 5.5 pF from 5, 5 and 7 pF for
to 7, 7and 6 pF from 5, 5 and 7 pF for 165
DDQ
SS
DD
< V
on the Pin Configuration table for 209
DOH
= Min. to V
DD
from 1.3 ns to 1.5 ns for 200 Mhz
to V
TDOV
DDQ
from 5 ns to 10 ns in TAP
DD
 V
= Max for V
DDQ
CY7C1460AV25
CY7C1462AV25
CY7C1464AV25
DD
Relative to GND.
OL
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