CY7C1470V25-200BZI Cypress Semiconductor Corp, CY7C1470V25-200BZI Datasheet - Page 7

• Manufacturer Part Number: CY7C1470V25-200BZI
• Description: CY7C1470V25-200BZI
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C1470V25-200BZI

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous
• Memory Size: 72M (2M x 36)
• Speed: 200MHz
• Interface: Parallel
• Voltage - Supply: 2.375 V ~ 2.625 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 165-LFBGA
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Pin Definitions
Document Number: 38-05290 Rev. *L
ADV/LD
CLK
CE
CE
CE
OE
CEN
DQ
DQP
MODE
TDO
TDI
TMS
TCK
V
V
V
NC
Pin Name
DD
DDQ
SS
1
2
3
s
X
JTAG serial output
JTAG serial input
Test mode select
I/O power supply Power supply for the I/O circuitry.
Input strap pin
asynchronous
Power supply
synchronous
synchronous
synchronous
synchronous
synchronous
synchronous
synchronous
synchronous
synchronous
synchronous
JTAG clock
I/O Type
Ground
Input-
Input-
Input-
Input-
Input-
Input-
Input-
clock
I/O-
I/O-
–
(continued)
Advance/load input used to advance the on-chip address counter or load a new address.
When HIGH (and CEN is asserted LOW) the internal burst counter is advanced. When LOW, a
new address can be loaded into the device for an access. After being deselected, ADV/LD should
be driven LOW in order to load a new address.
Clock input. Used to capture all synchronous inputs to the device. CLK is qualified with CEN.
CLK is only recognized if CEN is active LOW.
Chip enable 1 input, active LOW. Sampled on the rising edge of CLK. Used in conjunction with
CE
Chip enable 2 input, active HIGH. Sampled on the rising edge of CLK. Used in conjunction with
CE
Chip enable 3 input, active LOW. Sampled on the rising edge of CLK. Used in conjunction with
CE
Output enable, active LOW. Combined with the synchronous logic block inside the device to
control the direction of the I/O pins. When LOW, the I/O pins are allowed to behave as outputs.
When deasserted HIGH, I/O pins are tri-stated, and act as input data pins. OE is masked during
the data portion of a write sequence, during the first clock when emerging from a deselected state
and when the device has been deselected.
Clock enable input, active LOW. When asserted LOW the clock signal is recognized by the
SRAM. When deasserted HIGH the clock signal is masked. Since deasserting CEN does not
deselect the device, CEN can be used to extend the previous cycle when required.
Bidirectional data I/O lines. As inputs, they feed into an on-chip data register that is triggered
by the rising edge of CLK. As outputs, they deliver the data contained in the memory location
specified by A
controlled by OE and the internal control logic. When OE is asserted LOW, the pins can behave
as outputs. When HIGH, DQ
automatically tri-stated during the data portion of a write sequence, during the first clock when
emerging from a deselected state, and when the device is deselected, regardless of the state of OE.
Bidirectional data parity I/O lines. Functionally, these signals are identical to DQ
write sequences, DQP
BW
DQP
Mode input. Selects the burst order of the device. Tied HIGH selects the interleaved burst order.
Pulled LOW selects the linear burst order. MODE should not change states during operation.
When left floating MODE will default HIGH, to an interleaved burst order.
Serial data-out to the JTAG circuit. Delivers data on the negative edge of TCK.
Serial data-in to the JTAG circuit. Sampled on the rising edge of TCK.
This pin controls the test access port state machine. Sampled on the rising edge of TCK.
Clock input to the JTAG circuitry.
Power supply inputs to the core of the device.
Ground for the device. Should be connected to ground of the system.
No connects. This pin is not connected to the die.
2
1
1
c
and CE
, and DQP
and CE
and CE
g
is controlled by BW
2
3
3
to select/deselect the device.
to select/deselect the device.
to select/deselect the device.
[18:0]
d
is controlled by BW
during the previous clock rise of the read cycle. The direction of the pins is
a
is controlled by BW
g,
DQP
a
–DQ
h
h
is controlled by BW
are placed in a tri-state condition. The outputs are
d
, DQP
Pin Description
a
e
, DQP
is controlled by BW
b
is controlled by BW
h
.
e,
DQP
b
f
, DQP
is controlled by BW
CY7C1470V25
CY7C1472V25
CY7C1474V25
c
is controlled by
[71:0]
. During
Page 7 of 31
f,
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