CY7C1474V25-200BGXI Cypress Semiconductor Corp, CY7C1474V25-200BGXI Datasheet - Page 20

CY7C1474V25-200BGXI

CY7C1474V25-200BGXI

Manufacturer Part Number
CY7C1474V25-200BGXI
Description
CY7C1474V25-200BGXI
Manufacturer
Cypress Semiconductor Corp
Datasheet

Specifications of CY7C1474V25-200BGXI

Format - Memory
RAM
Memory Type
SRAM - Synchronous
Memory Size
72M (1M x 72)
Speed
200MHz
Interface
Parallel
Voltage - Supply
2.375 V ~ 2.625 V
Operating Temperature
-40°C ~ 85°C
Package / Case
209-FBGA
Density
72Mb
Access Time (max)
3ns
Sync/async
Synchronous
Architecture
SDR
Clock Freq (max)
200MHz
Operating Supply Voltage (typ)
2.5V
Address Bus
20b
Package Type
FBGA
Operating Temp Range
-40C to 85C
Number Of Ports
8
Supply Current
450mA
Operating Supply Voltage (min)
2.375V
Operating Supply Voltage (max)
2.625V
Operating Temperature Classification
Industrial
Mounting
Surface Mount
Pin Count
209
Word Size
72b
Number Of Words
1M
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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Part Number
Manufacturer
Quantity
Price
Part Number:
CY7C1474V25-200BGXI
Manufacturer:
Cypress Semiconductor Corp
Quantity:
135
Part Number:
CY7C1474V25-200BGXI
Manufacturer:
Cypress Semiconductor Corp
Quantity:
10 000
Part Number:
CY7C1474V25-200BGXI
Manufacturer:
CYPRESS/赛普拉斯
Quantity:
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Electrical Characteristics
Over the Operating Range
Capacitance
Thermal Resistance
Document Number: 38-05290 Rev. *L
I
I
C
C
C
C
C
Note
SB3
SB4
15. Tested initially and after any design or process changes that may affect these parameters.
Parameter
ADDRESS
DATA
CTRL
CLK
I/O
Parameter
Parameter
JC
JA
Automatic CE
power-down
current—CMOS inputs
Automatic CE
power-down
current—TTL inputs
Address input capacitance
Data input capacitance
Control input capacitance
Clock input capacitance
Input/output capacitance
[15]
Thermal resistance
(junction to ambient)
Thermal resistance
(junction to case)
Description
Description
[12, 13]
Description
[15]
(continued)
Max V
V
V
f = f
Max V
V
Test conditions follow standard
test methods and procedures for
measuring thermal impedance,
per EIA/JESD51.
IN
IN
IN
 0.3 V or
> V
MAX
 V
DD
DD
IH
DDQ
= 1/t
Test Conditions
, device deselected,
, device deselected,
or V
0.3 V,
CYC
T
IN
A
Test Conditions
= 25 C, f = 1 MHz,
 V
V
Test Conditions
V
DDQ
IL
DD
, f = 0
= 2.5 V
= 2.5 V
4.0-ns cycle, 250 MHz
5.0-ns cycle, 200 MHz
6.0-ns cycle, 167 MHz
All speed grades
100 TQFP
Package
24.63
100 TQFP
2.28
Max
6
5
8
6
5
165 FBGA
165 FBGA
Package
Max
16.3
2.1
6
5
8
6
5
Min
209 FBGA
209 FBGA
CY7C1470V25
CY7C1472V25
CY7C1474V25
Package
Max
15.2
6
5
8
6
5
1.7
Max
200
200
200
135
Page 20 of 31
Unit
C/W
C/W
Unit
pF
pF
pF
pF
pF
Unit
mA
mA
mA
mA
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