DG411LDY-T1-E3 Vishay, DG411LDY-T1-E3 Datasheet - Page 10
![no-image](/images/manufacturer_photos/0/6/697/vishay_sml.jpg)
DG411LDY-T1-E3
Manufacturer Part Number
DG411LDY-T1-E3
Description
LOW VOLTAGE COMPANION TO THE DG411DY-T1
Manufacturer
Vishay
Datasheet
1.DG411LDY-T1-E3.pdf
(11 pages)
Specifications of DG411LDY-T1-E3
Function
Switch
Circuit
4 x SPST - NC
On-state Resistance
30 Ohm
Voltage Supply Source
Single, Dual Supply
Voltage - Supply, Single/dual (±)
2.7 V ~ 12 V, ± 3 V ~ 6 V
Current - Supply
-1µA, 1µA
Operating Temperature
-40°C ~ 85°C
Mounting Type
Surface Mount
Package / Case
16-SOIC (0.154", 3.90mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
DG411LDY-T1-E3TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
DG411LDY-T1-E3
Manufacturer:
MAXIM
Quantity:
11 324
DG411L, DG412L, DG413L
Vishay Siliconix
TEST CIRCUITS
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71397.
www.vishay.com
10
V
V
g
S
R
g
= 50
0 V, 2.4 V
Ω
3 V
R
g
C
S
IN
Figure 6. Off-Isolation
S
IN
GND
Off Isolation = 20 log
GND
V
V
V
V
C = RF Bypass
L
L
L
L
C = RF bypass
X
TALK
V-
V-
V+
V+
Isolation = 20 log
V+
V+
V-
V-
V
D
D
S
C
R
V
V
O
g
S
C
= 50
0 V , 2.4 V
0 V, 2.4 V
10 nF
Ω
C
R
50
L
V
L
V
V
O
Ω
Figure 4. Charge Injection
NC
S
O
V
O
C
Figure 5. Crosstalk
S
IN
S
IN
1
2
1
2
V
V
GND
L
L
0 V, 2.4 V
IN
by sense of switch.
X
dependent on switch configuration Input polarity determined
C
IN
C
V -
V-
V+
V+
GND
IN
IN
V
V
V
D
D
L
L
O
X
X
1
2
Figure 7. Source/Drain Capacitances
OFF
OFF
C
V -
V-
V+
V+
C
50
R
S
D
L
Ω
V
Q = ΔV
O
S11-0179-Rev. F, 07-Feb-11
ON
ON
C
Document Number: 71397
O
x C
L
or Equivalent
Impedance
HP4192A
Analyzer
Meter
OFF
OFF
ΔV
O