DG413LDY-T1-E3 Vishay, DG413LDY-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: DG413LDY-T1-E3
• Description: LOW VOLTAGE COMPANION TO THE DG413DY
• Manufacturer: Vishay

Specifications of DG413LDY-T1-E3

• Function: Switch
• Circuit: 4 x SPST - NC/NO
• On-state Resistance: 20 Ohm
• Voltage Supply Source: Single, Dual Supply
• Voltage - Supply, Single/dual (±): 2.7 V ~ 12 V, ± 3 V ~ 6 V
• Current - Supply: -1µA, 1&microA
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 16-SOIC (0.154", 3.90mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: DG413LDY-T1-E3TR

Notes:
a. Refer to PROCESS OPTION FLOWCHART.
b. Room = 25 °C, Full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
e. Guaranteed by design, not subject to production test.
f. V
g. Leakage parameters are guaranteed by worst case test conditions and not subject to test.
Document Number: 71397
S11-0179-Rev. F, 07-Feb-11
SPECIFICATIONS
Parameter
Analog Switch
Analog Signal Range
Drain-Source On-Resistance
Switch Off Leakage Current
Channel On Leakage
Current
Digital Control
Input Current, V
Input Current, V
Dynamic Characteristics
Turn-On Time
Turn-Off Time
Break-Before-Make
Time Delay
Charge Injection
Off-Isolation
Channel-to-Channel
Crosstalk
Source Off Capacitance
Drain Off Capacitance
Channel-On Capacitance
Power Supplies
Positive Supply Current
Negative Supply Current
Logic Supply Current
Ground Current
IN
= input voltage to perform proper function.
e
e
IN
IN
e
Low
High
e
e
e
e
a
(Single Supply 12 V)
V
Symbol
R
ANALOG
C
C
C
OIRR
X
I
I
I
I
DS(on)
t
S(off)
D(off)
D(on)
t
GND
OFF
TALK
S(off)
D(off)
D(on)
I
I
ON
t
I+
Q
I
I-
IH
IL
D
L
R
Unless Otherwise Specified
V
L
V
g
= 50 , C
V
L
= 0 V, R
R
R
I
DG413L only, V
D
V
V
S
V
= 5 V, V
V+ = 10.8 V, V- = 0 V
L
L
V+ = 12 V, V- = 0 V
IN
IN
S
= 10 mA, V
= 1/11 V, V
V
Test Conditions
= 300 , C
= 300 , C
= 5 V, see figure 2
S
under test = 0.8 V
under test = 2.4 V
V
IN
= V
f = 1 MHz
g
L
= 0 or 5 V
IN
= 0 , C
D
= 5 pF , f = 1 MHz
= 2.4 V, 0.8 V
= 11/1 V
S
D
L
L
= 11/1 V
= 35 pF
= 35 pF
= 2/9 V
S
L
= 5 V
= 10 nF
f
Temp.
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Full
Full
Full
Full
Full
Full
Full
Full
Full
Full
Full
Full
Full
DG411L, DG412L, DG413L
b
- 0.002
- 0.002
Typ.
0.002
0.01
0.02
20
20
12
71
95
15
6
5
5
6
c
- 55 °C to 125 °C
A Suffix Limits
Min.
- 1.5
- 1.5
- 7.5
- 7.5
- 15
- 15
- 15
- 1
- 1
- 1
- 1
- 1
0
d
Max.
1.5
1.5
7.5
7.5
12
30
45
15
15
15
50
70
30
48
1
1
1
1
1
d
Vishay Siliconix
D Suffix Limits
- 40 °C to 85 °C
Min.
- 10
- 10
- 10
- 1
- 1
- 1
- 1
- 1
- 1
- 5
- 1
- 5
0
d
www.vishay.com
Max.
12
30
40
10
10
10
50
60
30
40
1
1
1
1
1
1
5
1
5
d
Unit
nA
µA
pC
dB
pF
µA
ns

V
3