DG636EQ-T1-E3 Vishay, DG636EQ-T1-E3 Datasheet - Page 6

• Manufacturer Part Number: DG636EQ-T1-E3
• Description: 0.5pC Charge Injection, Dual SPDT AS
• Manufacturer: Vishay

Specifications of DG636EQ-T1-E3

• Function: Switch
• Circuit: 2 x SPDT
• On-state Resistance: 160 Ohm
• Current - Supply: 1µA
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 14-TSSOP
• Number Of Switches: Dual
• Switch Configuration: SPDT
• On Resistance (max): 245 Ohm @ 3 V
• On Time (max): 108 ns @ 3 V
• Off Time (max): 76 ns @ 3 V
• Off Isolation (typ): - 58 dB
• Bandwidth: 610 MHz
• Supply Voltage (max): 12 V
• Supply Voltage (min): 2.7 V
• Maximum Power Dissipation: 450 mW
• Maximum Operating Temperature: + 125 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 40 C
• Switch Current (typ): 0.000001 mA/- 0.000001 mA @ +/- 5 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: DG636EQ-T1-E3TR

DG636
Vishay Siliconix
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
6
SPECIFICATIONS FOR SINGLE SUPPLY
Parameter
Dynamic Characteristics
Transition Time
Enable Turn-On Time
Enable Turn-Off Time
Break-Before-Make-
Time
Charge Injection
Off-Isolation
Crosstalk
Bandwidth
Total Harmonic Distortion
Source Off Capacitance
Drain Off Capacitance
Channel On
Capacitance
Power Supplies
Power Supply Current
Negative Supply Current
Ground Current
e
e
e
e
e
e
Symbol
t
t
t
OFF(EN)
C
C
ON(EN)
X
C
TRANS
OIRR
t
THD
I
BMM
BW
GND
TALK
S(off)
D(off)
D(on)
Q
I+
I-
V
V
C
Signal = 1 V
f = 10 MHz, R
IN A0, A1 and ENABLE
S(CLOSE)
L
Unless Otherwise Specified
= 1 nF, R
R
L
V+ = 3 V, V- = 0 V
Test Conditions
= 300 , C
V
= 3.0 V, V
IN
R
GEN
R
f = 1 MHz
RMS,
L
= 0 V, or V+
L
L
= 600 
= 50 
= 50 , C
= 0 , V
20 Hz to 20 kHz,
S(OPEN)
L
= 1.4 V, 0.6 V
= 35 pF
GEN
L
= 0.0 V,
= 5 pF
= 0 V
a
Temp.
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Full
Full
Full
Full
Full
Full
Full
Full
b
- 0.001
- 0.001
Typ.
0.001
0.24
0.09
11.7
- 57
- 93
442
2.5
6.4
95
77
35
45
c
- 40 °C to + 125 °C - 40 °C to + 85 °C
Min.
- 0.5
- 0.5
- 1
- 1
5
d
Max.
130
190
108
161
112
0.5
76
1
S10-1815-Rev. D, 02-Aug-10
d
Document Number: 69901
Min.
- 0.5
- 0.5
- 1
- 1
5
d
Max.
130
160
108
131
0.5
76
88
1
d
Unit
MHz
pC
dB
µA
pF
ns
%