FOD852SD Fairchild Semiconductor, FOD852SD Datasheet - Page 3

• Manufacturer Part Number: FOD852SD
• Description: Darlington-NPN-Output Dc-Input Optocoupler,1-CHANNEL,5kV ISOLATION,SO
• Manufacturer: Fairchild Semiconductor

Specifications of FOD852SD

• Configuration: 1 Channel
• Input Type: DC
• Maximum Collector Emitter Voltage: 300 V
• Maximum Collector Emitter Saturation Voltage: 1.2 V
• Isolation Voltage: 5000 Vrms
• Current Transfer Ratio: 15000 %
• Maximum Forward Diode Voltage: 1.4 V
• Maximum Collector Current: 150 mA
• Maximum Power Dissipation: 150 mW
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 30 C
• Package / Case: PDIP-4 Gull Wing
• Maximum Fall Time: 100 us
• Maximum Input Diode Current: 50 mA
• Maximum Reverse Diode Voltage: 6 V
• Maximum Rise Time: 300 us
• Output Device: Photodarlington
• Output Type: DC
• Number Of Elements: 1
• Reverse Breakdown Voltage: 6V
• Forward Voltage: 1.4V
• Forward Current: 50mA
• Collector-emitter Voltage: 300V
• Package Type: PDIP-B SMD
• Collector Current (dc) (max): 150mA
• Power Dissipation: 150mW
• Collector-emitter Saturation Voltage: 1.2V
• Fall Time: 100000ns
• Rise Time: 300000ns
• Pin Count: 4
• Mounting: Surface Mount
• Operating Temp Range: -30C to 100C
• Operating Temperature Classification: Commercial
• Lead Free Status / Rohs Status: Details

©2006 Fairchild Semiconductor Corporation
FOD852 Rev. 1.2.1
Electrical Characteristics
Individual Component Characteristics
Transfer Characteristics
Isolation Characteristics
Note:
1. Current Transfer Ratio (CTR) = I
INPUT
OUTPUT
Symbol
Symbol
Symbol
V
BV
BV
R
C
CE (sat)
V
CTR
R
I
CEO
C
ISO
I
f
ISO
ISO
V
C
t
t
I
C
iso
C
CEO
ECO
r
R
f
f
F
t
Input-Output Isolation
Voltage
Isolation Resistance
Isolation Capacitance
Collector Current
Current Transfer Ratio
Collector-Emitter Saturation
Voltage
Isolation Resistance
Floating Capacitance
Cut-Off Frequency
Response Time (Rise)
Response Time (Fall)
Forward Voltage
Reverse Current
Terminal Capacitance
Collector Dark Current
Collector-Emitter Breakdown Voltage
Emitter-Collector Breakdown Voltage
Characteristic
DC Characteristic
Parameter
(1)
C
/I
(T
f = 60Hz, t = 1 min, I
V
V
F
I-O
I-O
A
x 100%.
= 25°C unless otherwise specified.)
= 500 VDC
= 0, f = 1MHz
I
I
DC500V 40~60% R.H.
V = 0, f = 1MHz
V
V
F
F
CE
CE
= 1mA, V
= 20mA, I
Test Conditions
= 2V, I
= 2V, I
Test Conditions
C
C
I
V
V = 0, f = 1kHz
V
I
I
CE
C
F
C
E
= 20mA, R
= 20mA, R
R
CE
= 10mA
= 10µA, I
= 100mA
= 0.1mA, I
I-O
= 2V
= 4V
3
Test Conditions
= 200V, I
2µA
F
L
L
F
= 0
F
= 100 , -3dB
= 100
= 0
= 0
5 x 10
Min.
5000
10
5x10
Min.
300
1,000
0.1
Min.
10
Typ.
1
10
0.6
10
11
Typ.
1x10
1.2
4,000
30
Typ.
100
0.6
40
20
7
Max.
11
1.0
–
Max.
15,000
250
200
Max.
1.4
10
1 f0
300
100
1.2
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1
Vac(rms)
Units
Unit
pf
Unit
µA
pF
nA
kHz
mA
V
V
pF
V
µs
µs
%
V