X0202NUF STMicroelectronics, X0202NUF Datasheet - Page 4

• Manufacturer Part Number: X0202NUF
• Description: SCR 1.25A 800V SMBFLAT-3L
• Manufacturer: STMicroelectronics

Specifications of X0202NUF

• Voltage - On State (vtm) (max): 1.45V
• Current - On State (it (rms)) (max): 1.25A
• Current - Off State (max): 5µA
• Operating Temperature: -40°C ~ 125°C
• Scr Type: Sensitive Gate
• Voltage - Off State: 800V
• Voltage - Gate Trigger (vgt) (max): 800mV
• Current - On State (it (av)) (max): 800mA
• Current - Gate Trigger (igt) (max): 200µA
• Current - Hold (ih) (max): 5mA
• Current - Non Rep. Surge 50, 60hz (itsm): 22.5A, 25A
• Mounting Type: *
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-11106-2

Characteristics
4/11
Figure 5.
Figure 7.
Figure 9.
1.50
1.25
1.00
0.75
0.50
0.25
0.00
10.0
25
20
15
10
1.0
0.1
5
0
1
I
0.0
-40
TSM
dV/dt[R
I
GT H L
(A)
,I ,I [T ] /
0.2
-20
GK
T
Relative variation of triggering,
holding and latching current versus
junction temperature
Relative variation of dV/dt immunity
versus gate-cathode resistance
(typical values)
Surge peak on-state current
versus number of cycles
Repetitive
amb
0.4
j
] / dV/dt[
=25°C
0
I
GT H L
0.6
,I ,I [T =25°C]
10
20
R
GK
Non repetitive
T initial=25°C
0.8
j
T (°C)
j
=1k ]
R
40
j
GK
1.0
(k )
60
1.2
I
GT
Typical values
100
80
1.4
R
GK
I
H
& I
= 1k
100
Number of cycles
L
1.6
t =10ms
p
V = 0.67 x V
D
One cycle
T
j
120
= 125°C
1.8
Doc ID 7480 Rev 4
DRM
1000
140
2.0
Figure 6.
Figure 8.
Figure 10. Non repetitive surge peak on state
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
20
18
16
14
12
10
300
100
8
6
4
2
0
1.E-02
10
1
0
dV/dt[C
I [R
0.01
H
I
TSM
V = 0.67 x V
D
dI/dt limitation
GK
R
T
2
j
GK
= 125°C
(A), I t (A s)
] / I [
= 1k
GK
DRM
H
Relative variation of holding
current versus gate-cathode
resistance (typical values)
Relative variation of dV/dt immunity
versus gate-cathode capacitance
(typical values)
] / dV/dt[
4
current for a sinusoidal pulse and
corresponding value of I
2
R
GK
2
6
1.E-01
=1k ]
0.10
R
GK
8
=1k ]
R
C
10
t (ms)
GK
GK
p
(k )
(nF)
12
1.E+00
14
1.00
16
I
TSM
2
18
T
T initial = 25°C
j
I t
2
Tj=25
20
1.E+01
10.00
22
X02