BAS70-T1 (P) Infineon Technologies, BAS70-T1 (P) Datasheet - Page 2
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BAS70-T1 (P)
Manufacturer Part Number
BAS70-T1 (P)
Description
Schottky (Diodes & Rectifiers) HiRel Silicon Schottky Diode
Manufacturer
Infineon Technologies
Datasheet
1.BAS70-T1_ES.pdf
(3 pages)
Specifications of BAS70-T1 (P)
Product
Schottky Diodes
Peak Reverse Voltage
70 V
Forward Continuous Current
0.07 A
Max Surge Current
0.085 A
Configuration
Single
Forward Voltage Drop
1 V at 0.01 A
Maximum Reverse Leakage Current
2 uA
Operating Temperature Range
+ 150 C
Mounting Style
SMD/SMT
Package / Case
T1
Package
T1
Comment
Also available in (H) and (S) quality
If (max)
120.0 mA
Vbr (min)
40.0 V
Rf (typ)
9.0 Ohm
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BAS70T1PNZ
Maximum Ratings
Electrical Characteristics
at T
Notes.:
1.) t 10ms, Duty Cycle=10%
2.) At T
3.) During 5 sec. maximum. The same terminal shall not be resoldered until 3 minutes have elapsed.
4.)
IFAG IMM RPD D HIR
Parameter
Reverse Voltage
Forward Current
Surge Forward Current
Power Dissipation
Operating Temperature Range
Storage Temperature Range
Soldering Temperature
Junction Temperature
Thermal Resistance Junction-Case
Parameter
DC Characteristics
Reverse Current 1, V
Reverse Current 2, V
Forward Voltage 1, I
Forward Voltage 2, I
Forward Voltage 3, I
Differential Forward Resistance
I
AC Characteristics
Total Capacitance
V
F2
R
=10mA, I
=0V; f=1MHz
A
=25°C; unless otherwise specified
CASE
R
FD
= 125 °C. For T
=----------------
F3
V
5x10 -3 A
=15mA
F
2)
F1
F2
F3
R
R
=1mA
=10mA
=15mA
=70V
=56V
1)
3)
CASE
> 125 °C derating is required.
4)
Symbol
V
I
I
P
T
T
T
T
R
Symbol
I
I
V
V
V
R
C
F
FSM
R1
R2
op
stg
sol
j
R
tot
F1
F2
F3
th(j-c)
FD
T
2 of 3
min.
-
-
0,30
0,60
0,80
24
1,2
-55 to +150
-55 to +150
Values
1,5
Values
typ.
-
-
0,38
0,70
0,85
30
+250
250
150
100
70
70
85
max.
2
0,1
0,44
0,78
1,00
32
2
V2, Februar 2011
BAS70
Unit
V
mA
mA
mW
°C
°C
°C
°C
K/W
Unit
µA
µA
V
V
V
pF