MBRB16H35/81 Vishay, MBRB16H35/81 Datasheet - Page 3

• Manufacturer Part Number: MBRB16H35/81
• Description: Schottky (Diodes & Rectifiers) 35 Volt 16A Single 150 Amp IFSM
• Manufacturer: Vishay

Specifications of MBRB16H35/81

• Product: Schottky Diodes
• Peak Reverse Voltage: 35 V
• Forward Continuous Current: 16 A
• Max Surge Current: 150 A
• Configuration: Single Dual Cathode
• Forward Voltage Drop: 0.66 V
• Maximum Reverse Leakage Current: 100 uA
• Operating Temperature Range: - 65 C to + 175 C
• Mounting Style: SMD/SMT
• Package / Case: D2PAK (TO-263AB)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

RATINGS AND CHARACTERISTICS CURVES
(T
Document Number: 88784
Revision: 19-May-08
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
A
= 25 °C unless otherwise noted)
Figure 3. Typical Instantaneous Forward Characteristics
0.01
100
150
125
100
0.1
20
15
10
10
75
50
25
5
0
1
0
0
0
1
Figure 1. Forward Current Derating Curve
0.1
25
T
J
Instantaneous Forward Voltage (V)
= 150 °C
0.2
Number of Cycles at 60 Hz
50
Case Temperature (°C)
0.3
0.4
75
T
[e-mail], [e-mail], [e-mail]
T
8.3 ms Single Half Sine-Wave
J
0.5
For technical questions within your region, please contact one of the following:
10
= 125 °C
J
= T
MBR16H35 - MBR16H45
MBR16H50 - MBR16H60
100
J
0.6
Max.
T
MBRF
J
0.7
125
= 25 °C
MBR, MBRB
0.8
150
0.9
175
1.0
100
MBR(F,B)16H35 thru MBR(F,B)16H60
10 000
1000
100
0.0001
0.1
10
0.001
0.01
1
100
0.01
0.1
0.1
Figure 6. Typical Transient Thermal Impedance
10
1
Vishay General Semiconductor
0
Figure 4. Typical Reverse Characteristics
T
f = 1.0 MHz
V
J
sig
Figure 5. Typical Junction Capacitance
T
= 25 °C
J
Percent of Rated Peak Reverse Voltage (%)
= 50 mVp-p
= 150 °C
MBR16H35 - MBR16H45
MBR16H50 - MBR16H60
20
MBR16H35 - MBR16H45
MBR16H50 - MBR16H60
t - Pulse Duration (s)
Reverse Voltage (V)
0.1
1
40
60
10
1
T
J
= 125 °C
T
80
J
= 25 °C
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100
10
100
3