MBR30H60CT/45 Vishay, MBR30H60CT/45 Datasheet - Page 3

• Manufacturer Part Number: MBR30H60CT/45
• Description: Schottky (Diodes & Rectifiers) 60 Volt 30A Dual Common-Cathode
• Manufacturer: Vishay

Specifications of MBR30H60CT/45

• Product: Schottky Diodes
• Peak Reverse Voltage: 60 V
• Forward Continuous Current: 30 A
• Max Surge Current: 150 A
• Configuration: Dual Common Cathode
• Forward Voltage Drop: 0.83 V
• Maximum Reverse Leakage Current: 60 uA
• Operating Temperature Range: - 65 C to + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

RATINGS AND CHARACTERISTICS CURVES
(T
Document Number: 88866
Revision: 31-Jul-08
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
A
= 25 °C unless otherwise noted)
Figure 2. Maximum Non-Repetitive Peak Forward Surge
125
100
0.01
150
100
10
0.1
40
30
20
10
75
50
25
0
0
1
0
1
0
0.1
T
25
J
Figure 1. Forward Derating Curve
= 150 °C
Instantaneous Forward Voltage (V)
0.2
Number of Cycles at 60 Hz
50
Case Temperature (°C)
0.3
Current Per Diode
0.4
75
[e-mail], [e-mail], [e-mail]
MBR30H35CT - MBR30H45CT
MBR30H50CT - MBR30H60CT
T
8.3 ms Single Half Sine-Wave
T
For technical questions within your region, please contact one of the following:
J
0.5
10
J
= T
= 125 °C
100
J
0.6
Max.
T
0.7
MBRF
125
J
= 25 °C
MBR, MBRB
0.8
150
0.9
MBR(F,B)30H35CT thru MBR(F,B)30H60CT
175
100
1.0
10 000
0.0001
Figure 6. Typical Transient Thermal Impedance Per Diode
0.001
1000
0.01
100
100
0.1
0.1
10
Figure 4. Typical Reverse Characteristics Per Diode
10
1
1
Figure 5. Typical Junction Capacitance Per Diode
0.01
0.1
0
Vishay General Semiconductor
Percent of Rated Peak Reverse Voltage (%)
T
J
= 150 °C
20
MBR30H35CT - MBR30H45CT
MBR30H50CT - MBR30H60CT
MBR30H35CT - MBR30H45CT
MBR30H50CT - MBR30H60CT
t - Pulse Duration (s)
Reverse Voltage (V)
0.1
1
40
60
T
J
10
= 125 °C
1
T
f = 1.0 MHz
V
J
sig
= 25 °C
T
= 50 mVp-p
J
80
= 25 °C
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100
100
10
3