MBR4045PT ON Semiconductor, MBR4045PT Datasheet - Page 2

• Manufacturer Part Number: MBR4045PT
• Description: Schottky (Diodes & Rectifiers) 40A 45V
• Manufacturer: ON Semiconductor
• Series: SWITCHMODE™r

Specifications of MBR4045PT

• Product: Schottky Diodes
• Peak Reverse Voltage: 45 V
• Forward Continuous Current: 40 A
• Max Surge Current: 400 A
• Configuration: Dual Common Cathode
• Forward Voltage Drop: 0.8 V
• Maximum Reverse Leakage Current: 1000 uA
• Operating Temperature Range: - 65 C to + 175 C
• Mounting Style: Through Hole
• Package / Case: SOT-93
• Voltage - Forward (vf) (max) @ If: 700mV @ 20A
• Current - Reverse Leakage @ Vr: 1mA @ 45V
• Current - Average Rectified (io) (per Diode): 20A
• Voltage - Dc Reverse (vr) (max): 45V
• Reverse Recovery Time (trr): -
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Through Hole, Radial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dP
MAXIMUM RATINGS
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may
affect device reliability.
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
Maximum Thermal Resistance, Junction−to−Case
Maximum Thermal Resistance, Junction−to−Ambient
Instantaneous Forward Voltage (Note 2)
(i
(i
(i
(i
Instantaneous Reverse Current (Note 2)
(Rated DC Voltage, T
(Rated DC Voltage, T
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(Rated V
Peak Repetitive Forward Current,
Non−Repetitive Peak Surge Current
Peak Repetitive Reverse Current,
Storage Temperature Range
Operating Junction Temperature (Note 1)
Peak Surge Junction Temperature
Voltage Rate of Change
F
F
F
F
(Rated V
@ T
(Surge Applied at Rated Load Conditions Halfwave, Single Phase,
60 Hz)
(2.0 ms, 1.0 kHz)
(Forward Current Applied)
= 20 A, T
= 20 A, T
= 40 A, T
= 40 A, T
C
= 90°C) Per Diode
R
, T
R
J
J
J
J
, Square Wave, 20 kHz
C
= 25°C)
= 125°C)
= 25°C)
= 125°C)
= 125°C)
J
J
= 25°C)
= 125°C)
Characteristic
Rating
Per Device
Per Diode
Characteristic
http://onsemi.com
2
Symbol
V
V
I
T
I
I
dv/dt
I
F(AV)
RRM
T
FRM
FSM
RWM
RRM
V
J(pk)
T
stg
R
J
Minimum Pad
Minimum Pad
Conditions
Symbol
V
i
R
F
D
/dT
−65 to +175
−65 to +175
10,000
J
Max
400
175
Min
2.0
45
20
40
40
< 1/R
−
−
−
−
−
−
qJA
Symbol
R
R
.
0.53
0.46
0.64
0.62
0.09
qJC
qJA
Typ
30
Max
Max
0.70
0.60
0.80
0.75
1.4
1.0
55
50
Unit
V/ms
°C
°C
°C
V
A
A
A
A
°C/W
Unit
Unit
mA
V