MBD110DWT1G ON Semiconductor, MBD110DWT1G Datasheet

Schottky (Diodes & Rectifiers) 7V 120mW Dual Isolated

MBD110DWT1G

Manufacturer Part Number

MBD110DWT1G

Description

Schottky (Diodes & Rectifiers) 7V 120mW Dual Isolated

Manufacturer

ON Semiconductor

Series

-r

Datasheet

1.MBD770DWT1.pdf (6 pages)

Specifications of MBD110DWT1G

Product

Schottky Diodes

Peak Reverse Voltage

7 V

Configuration

Dual Anti Parallel

Forward Voltage Drop

0.6 V @ 0.01 A

Maximum Reverse Leakage Current

0.25 uA @ 3 V

Operating Temperature Range

- 55 C to + 125 C

Mounting Style

SMD/SMT

Package / Case

SC-88

Diode Type

Schottky - 2 Independent

Voltage - Peak Reverse (max)

Current - Max

Capacitance @ Vr, F

1pF @ 0V, 1MHz

Resistance @ If, F

Power Dissipation (max)

120mW

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Current page: 1 of 6
Download datasheet (150Kb)

MBD110DWT1G,

MBD330DWT1G,

MBD770DWT1G

Dual Schottky Barrier

Diodes

device count and into smaller packages. The new SOT−363 package is

a solution which simplifies circuit design, reduces device count, and

reduces board space by putting two discrete devices in one small

six−leaded package. The SOT−363 is ideal for low−power surface

mount applications where board space is at a premium, such as

portable products.

Surface Mount Comparisons:

Space Savings:

spin−offs of our popular MMBD101LT1, MMBD301LT1, and

MMBD701LT1 SOT−23 devices. They are designed for

high−efficiency UHF and VHF detector applications. Readily

available to many other fast switching RF and digital applications.

Features

•

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

MAXIMUM RATINGS

October, 2009 − Rev. 6

Area (mm

Max Package P

Device Count

SOT−363

Reverse Voltage

Forward Power Dissipation T

Junction Temperature

Storage Temperature Range

Application circuit designs are moving toward the consolidation of

The MBD110DW, MBD330DW, and MBD770DW devices are

Compliant

Extremely Low Minority Carrier Lifetime

Very Low Capacitance

Low Reverse Leakage

These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

)

Package

Rating

(mW)

MBD330DWT1G

MBD770DWT1G

MBD110DWT1G

Preferred Device

= 25°C

1 SOT−23

SOT−363

40%

120

4.6

Symbol

stg

2 SOT−23

−55 to +125

−55 to +150

SOT−23

Value

120

70%

7.0

225

7.6

Unit

°C

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

Preferred devices are recommended choices for future use

and best overall value.

(Note: Microdot may be in either location)

Cathode 3

Anode 1

ORDERING INFORMATION

N/C 2

MARKING DIAGRAM

= Device Code

= Date Code

= Pb−Free Package

http://onsemi.com

SC−88 / SOT−363

Refer to Ordering Table,

page 2

CASE 419B

STYLE 6

xx M G

Publication Order Number:

5 N/C

4 Anode

MBD110DWT1/D

6 Cathode

Related parts for MBD110DWT1G

MBD110DWT1G Summary of contents

Page 1

... Low Reverse Leakage • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Rating Reverse Voltage MBD110DWT1G MBD330DWT1G MBD770DWT1G Forward Power Dissipation T = 25°C A Junction Temperature Storage Temperature Range Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only ...

Page 2

... Tape and Reel Packaging Specifications Brochure, BRD8011/ 25°C unless otherwise noted) A Symbol V MBD110DWT1G MBD330DWT1G MBD770DWT1G MBD110DWT1G MBD330DWT1G MBD770DWT1G MBD110DWT1G MBD330DWT1G MBD770DWT1G MBD110DWT1G MBD110DWT1G MBD330DWT1G MBD770DWT1G Marking Package SC−88 / SOT−363 (Pb−Free) M4 SC−88 / SOT−363 (Pb−Free) T4 SC−88 / SOT−363 (Pb−Free) H5 http://onsemi.com ...

Page 3

... Model 250A RX Meter MHz http://onsemi.com 40° 25°C A MBD110DWT1G 0.5 0.6 0 FORWARD VOLTAGE (VOLTS) F Figure 2. Forward Voltage LOCAL OSCILLATOR FREQUENCY = 1.0 GHz (Test Circuit Figure 5) MBD110DWT1G 0.5 1.0 2.0 5.0 , LOCAL OSCILLATOR POWER (mW) LO Figure 4. Noise Figure and C are measured using a capacitance T 0.8 10 ...

Page 4

MBD330DWT1G 2.4 2.0 1.6 1.2 0.8 0 3.0 6.0 9 REVERSE VOLTAGE (VOLTS) R Figure 6. Total Capacitance 10 MBD330DWT1G T = 100°C 1 75° ...

Page 5

MBD770DWT1G 1.6 1.2 0 REVERSE VOLTAGE (VOLTS) R Figure 10. Total Capacitance 10 MBD770DWT1G T = 100°C 1 75°C A 0.1 0. 25°C ...

Page 6

... Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein ...

Related keywords

MBD110DWT1G datasheet
MBD110DWT1G data sheet
MBD110DWT1G pdf datasheet
MBD110DWT1G component
MBD110DWT1G part
MBD110DWT1G distributor
MBD110DWT1G RoHS
MBD110DWT1G datasheet download