BAS28,215 NXP Semiconductors, BAS28,215 Datasheet - Page 5

• Manufacturer Part Number: BAS28,215
• Description: DIODE SW 75V 215MA HS SOT143B
• Manufacturer: NXP Semiconductors

Specifications of BAS28,215

• Package / Case: SOT-143, SOT-143B, TO-253AA
• Voltage - Forward (vf) (max) @ If: 1.25V @ 150mA
• Current - Reverse Leakage @ Vr: 1µA @ 75V
• Current - Average Rectified (io) (per Diode): 215mA (DC)
• Voltage - Dc Reverse (vr) (max): 75V
• Reverse Recovery Time (trr): 4ns
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 2 Independent
• Mounting Type: Surface Mount
• Product: Switching Diodes
• Peak Reverse Voltage: 85 V
• Forward Continuous Current: 0.215 A
• Max Surge Current: 4 A
• Configuration: Dual Parallel
• Recovery Time: 4 ns
• Forward Voltage Drop: 1.25 V
• Maximum Reverse Leakage Current: 1 uA
• Operating Temperature Range: + 150 C
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-1600-2; 933679170215; BAS28 T/R

NXP Semiconductors
BAS28
Product data sheet
Fig 3.
Fig 5.
(nA)
I
(1) V
(2) V
(3) V
R
10
10
10
10
10
5
4
3
2
0
V
Reverse current as a function of junction
temperature
Forward current as a function of ambient temperature; derating curve
R
R
R
R
= V
= 75 V; maximum values
= 75 V; typical values
= 25 V; typical values
Rmax
(1)
(2)
(3)
100
(mA)
I
F
T
250
200
150
100
j
50
( °C )
0
0
All information provided in this document is subject to legal disclaimers.
mga884
200
50
Rev. 3 — 22 July 2010
100
Fig 4.
(pF )
C
0.8
0.6
0.4
0.2
d
150
0
0
f = 1 MHz; T
Diode capacitance as a function of reverse
voltage; typical values
T
amb
msa562
(°C)
200
4
j
= 25 °C
8
High-speed double diode
12
© NXP B.V. 2010. All rights reserved.
V
R
mbg446
BAS28
(V)
16
5 of 12