MBRD350T4 ON Semiconductor, MBRD350T4 Datasheet - Page 2

• Manufacturer Part Number: MBRD350T4
• Description: Schottky (Diodes & Rectifiers) 3A 50V
• Manufacturer: ON Semiconductor

Specifications of MBRD350T4

• Product: Schottky Diodes
• Peak Reverse Voltage: 50 V
• Forward Continuous Current: 3 A
• Max Surge Current: 75 A
• Configuration: Single Dual Anode
• Forward Voltage Drop: 0.7 V at 6 A
• Maximum Reverse Leakage Current: 200 uA
• Operating Temperature Range: - 65 C to + 175 C
• Mounting Style: SMD/SMT
• Package / Case: DPAK
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dP
2. Rating applies when surface mounted on the minimum pad size recommended.
3. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
Peak Repetitive Reverse Voltage
Average Rectified Forward Current (T
Peak Repetitive Forward Current, T
Nonrepetitive Peak Surge Current
Peak Repetitive Reverse Surge Current (2 ms, 1 kHz)
Operating Junction Temperature Range (Note 1)
Storage Temperature Range
Voltage Rate of Change (Rated V
Maximum Thermal Resistance, Junction−to−Case
Maximum Thermal Resistance, Junction−to−Ambient (Note 2)
Maximum Instantaneous Forward Voltage (Note 3)
Maximum Instantaneous Reverse Current (Note 3)
Working Peak Reverse Voltage
DC Blocking Voltage
(Rated V
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
i
i
i
i
(Rated dc Voltage, T
(Rated dc Voltage, T
F
F
F
F
= 3 Amps, T
= 3 Amps, T
= 6 Amps, T
= 6 Amps, T
R
, Square Wave, 20 kHz)
C
C
C
C
= +25°C
= +125°C
= +25°C
= +125°C
C
C
= +25°C)
= +125°C)
R
)
Rating
Rating
C
= +125°C
C
= +125°C, Rated V
http://onsemi.com
R
)
2
Symbol
Symbol
V
V
I
dv/dt
I
I
R
R
I
F(AV)
RRM
T
FRM
FSM
RWM
V
RRM
V
T
qJC
i
stg
qJA
R
R
J
F
320
D
20
/dT
J
< 1/R
330
30
−65 to +175
−65 to +175
qJA
MBRD
10,000
Value
0.625
0.45
340
0.6
0.7
0.2
40
75
80
20
3
6
1
6
.
350
50
360
60
°C/W
°C/W
V/ms
Unit
Unit
mA
°C
°C
V
A
A
A
A
V