BAT49 STMicroelectronics, BAT49 Datasheet

Schottky (Diodes & Rectifiers) RO 511-STPS2H100

BAT49

Manufacturer Part Number
BAT49
Description
Schottky (Diodes & Rectifiers) RO 511-STPS2H100
Manufacturer
STMicroelectronics
Datasheet

Specifications of BAT49

Product
Schottky Diodes
Peak Reverse Voltage
80 V
Forward Continuous Current
0.5 A
Max Surge Current
10 A
Configuration
Single
Forward Voltage Drop
1 V at 1 A
Maximum Reverse Leakage Current
200 uA
Operating Temperature Range
- 55 C to + 125 C
Mounting Style
Through Hole
Package / Case
DO-41
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BAT49
Manufacturer:
ST
Quantity:
80 000
Part Number:
BAT49
Manufacturer:
ST
0
ELECTRICAL CHARACTERISTICS
ABSOLUTE RATINGS (limiting values)
THERMAL RESISTANCE
STATIC CHARACTERISTICS
DYNAMIC CHARACTERISTICS
* On infinite heatsink with 4mm lead length
** Pulse test: t
DESCRIPTION
General purpose metal to silicon diode featuring
very low turn-on voltage and fast switching.
This device has integrated protection against ex-
cessive voltage such as electrostatic discharges.
August 1999 Ed : 1A
Symbol
Symbol
Symbol
Symbol
R
V
V
I
I
I
T
R
FRM
FSM
th(j-a)
F
RRM
T
I
T
C
stg
F
* *
L
* *
j
®
p
Repetitive Peak Reverse Voltage
Forward Continuous Current*
Repetitive Peak Forward Current*
Surge non Repetitive Forward Current*
Storage and Junction Temperature Range
Maximum Lead Temperature for Soldering during 10s at 4mm
from Case
Junction-ambient*
T
T
T
T
T
300 s
j
j
j
j
j
= 25 C
= 25 C
= 25 C
= 25 C
= 25 C
2%.
f = 1MHz
V
I
I
I
F
F
F
Test Conditions
Test Conditions
R
Test Conditions
= 10mA
= 100mA
= 1A
= 80V
Parameter
SMALL SIGNAL SCHOTTKY DIODE
T
t
t
p
p
V
V
a
= 1s
R
R
= 70 C
0.5
= 0V
= 5V
10ms
Min.
Min.
- 65 to 150
- 65 to 125
Value
Value
(Glass)
DO 41
Typ.
Typ.
500
230
110
120
80
10
35
3
BAT 49
Max.
Max.
0.32
0.42
200
1
Unit
Unit
Unit
Unit
C/W
mA
pF
V
A
A
V
C
C
C
A
1/4

Related parts for BAT49

BAT49 Summary of contents

Page 1

DESCRIPTION General purpose metal to silicon diode featuring very low turn-on voltage and fast switching. This device has integrated protection against ex- cessive voltage such as electrostatic discharges. ABSOLUTE RATINGS (limiting values) Symbol V Repetitive Peak Reverse Voltage RRM ...

Page 2

BAT 49 Figure 1. Forward current versus forward voltage at low level (typical values). Figure 3. Reverse current versus junction temperature. 2/4 Figure 2. Forward current versus forward voltage at high level (typical values). Figure 4. Reverse current versus V ...

Page 3

Figure 5. Capacitance C versus reverse applied voltage V (typical values). R Figure 7. Surge non repetitive forward current versus number of cycles. Figure 6. Surge non repetitive forward current for a rectangular pulse with t BAT 49 10 ms. ...

Page 4

... No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. ...

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