VSKH250-16PBF Vishay, VSKH250-16PBF Datasheet - Page 9
![no-image](/images/manufacturer_photos/0/6/697/vishay_sml.jpg)
VSKH250-16PBF
Manufacturer Part Number
VSKH250-16PBF
Description
SCR Modules 250 Amp 1600 Volt 7345 Amp IFSM
Manufacturer
Vishay
Datasheet
1.VSKE320-04.pdf
(12 pages)
Specifications of VSKH250-16PBF
Rated Repetitive Off-state Voltage Vdrm
1600 V
Off-state Leakage Current @ Vdrm Idrm
50 mA
Holding Current (ih Max)
500 mA
Mounting Style
Screw
Package / Case
MAGN-A-PAK
Breakover Current Ibo Max
8900 A
Gate Trigger Current (igt)
200 mA
Gate Trigger Voltage (vgt)
3 V
Repetitive Peak Forward Blocking Voltage
1600 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Document Number: 93581
Revision: 02-Jul-10
Fig. 25 - Forward Power Loss Characteristics
400
350
300
250
200
150
100
50
0
0
50
Average F orward Current (A)
R MS Limit
180°
120°
90°
60°
30°
100
DiodesAmericas@vishay.com, DiodesAsia@vishay.com,
150
1400
1200
1000
700
600
500
400
300
200
100
800
600
400
200
For technical questions within your region, please contact one of the following:
Standard Recovery Diodes, 250 A to 320 A
0
0
0
0
200
Conduction Angle
VSK.320.. S eries
T = 150°C
J
100
250
100
T otal RMS Output Current (A)
(MAGN-A-PAK Power Modules)
T otal Output Current (A)
300
200
200
Fig. 27 - Forward Power Loss Characteristics
Fig. 28 - Forward Power Loss Characteristics
350
300
S ingle Phase Bridge
2 x VSK.320.. S eries
(R ec t)
(S ine)
180°
180°
300
Connec ted
T = 150°C
(S ine)
180°
VSK.320.. S eries
J
Per Junc tion
400
T = 150°C
J
400
500
DC
VSK.250, VSK.270, VSK.320 Series
600
500
0
0
Maximum Allowable Ambient T emperature (°C)
Maximum Allowable Ambient T emperature (°C)
25
25
50
50
DiodesEurope@vishay.com
Fig. 26 - Forward Power Loss Characteristics
500
450
400
350
300
250
200
150
100
50
0
75
75
0
RMS Limit
180°
120°
DC
90°
60°
30°
100
100
100
Average Forward Current (A)
125
125
Vishay Semiconductors
200
150
150
300
Conduc tion Period
VSK.320.. S eries
Per Junction
T = 150°C
J
400
500
600
www.vishay.com
9