TISP61511D-S Bourns Inc., TISP61511D-S Datasheet - Page 4

• Manufacturer Part Number: TISP61511D-S
• Description: Sidacs Dual P Gate Forward Conducting
• Manufacturer: Bourns Inc.

Specifications of TISP61511D-S

• Breakover Current Ibo Max: 5 A
• Rated Repetitive Off-state Voltage Vdrm: 100 V
• Off-state Leakage Current @ Vdrm Idrm: 0.005 mA
• Forward Voltage Drop: 4 V
• Mounting Style: SMD/SMT
• Package / Case: SO-8
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Parameter Measurement Information
Characteristic
Switching
TISP61089 Gated Protector Series
-v
Quadrant III
V
V
(BO)
GK(BO)
V
GG
Unless Otherwise Noted, All Voltages are Referenced to the Anode
Figure 1. Voltage-Current Characteristic
I
FSM
(= |I
I
TSM
PPSM
|)
I
F
+i
-i
I
I
I
I
I
D
PPSM
T
TSM
H
V
F
Customers should verify actual device performance in their specific applications.
Specifications are subject to change without notice.
Characteristic
Conduction
Forward
NOVEMBER 1995 - REVISED JULY 2008
Quadrant I
PM6XAAC
+v