TISP2150F3DR-S Bourns Inc., TISP2150F3DR-S Datasheet - Page 8
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TISP2150F3DR-S
Manufacturer Part Number
TISP2150F3DR-S
Description
Sidacs
Manufacturer
Bourns Inc.
Datasheet
1.TISP1072F3DR.pdf
(12 pages)
Specifications of TISP2150F3DR-S
Breakover Current Ibo Max
4 A
Rated Repetitive Off-state Voltage Vdrm
120 V
Off-state Leakage Current @ Vdrm Idrm
0.01 mA
Forward Voltage Drop
3 V
Mounting Style
SMD/SMT
Package / Case
SO-8
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Typical Characteristics - R and T Terminals
TISP1xxxF3 Overvoltage Protector Series
0.001
0.09
0.08
0.07
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.01
100
0.1
10
1
HOLDING CURRENT & BREAKOVER CURRENT
-25
V
-25
D
= ± 50 V
I
(BO)
T
I
H
J
- Junction Temperature - °C
0
0
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE
T
J
OFF-STATE CURRENT
- Junction Temperature - °C
25
Figure 16.
Figure 14.
25
50
50
vs
vs
75
75
100
100
125
125
TC1LAO
TC1LAN
150
150
90.0
80.0
70.0
60.0
2.0
1.9
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.001
Customers should verify actual device performance in their specific applications.
RATE OF RISE OF PRINCIPLE CURRENT
NORMALIZED BREAKOVER VOLTAGE
I
(BR)
-25
di/dt - Rate of Rise of Principle Current - A/µs
= 1 mA
0.01
'1082F3
'1072F3
0
T
JUNCTION TEMPERATURE
J
BREAKDOWN VOLTAGES
- Junction Temperature - °C
Figure 17.
25
Figure 15.
0.1
Specifications are subject to change without notice.
vs
SEPTEMBER 1993 - REVISED SEPTEMBER 2008
50
vs
1
75
V
V
(BR)M
(BR)M
100
10
V
V
V
V
(BO)
(BR)
(BR)
(BO)
125
TC1LAI
TC1LAM
100
150