255RK160 3/4" UNF Ruttonsha, 255RK160 3/4" UNF Datasheet - Page 2

• Manufacturer Part Number: 255RK160 3/4" UNF
• Description: SCRs 250 Amp 1600 Volt
• Manufacturer: Ruttonsha

Specifications of 255RK160 3/4" UNF

• Rated Repetitive Off-state Voltage Vdrm: 1600 V
• Off-state Leakage Current @ Vdrm Idrm: 50 mA
• Forward Voltage Drop: 1.9 V
• Mounting Style: Stud
• Package / Case: TO-93
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ELECTRICAL SPECIFICATION
VOLTAGE RATINGS
ON-STATE CONDUCTION
SWITCHING
I
I
I
I
I
V
V
r
r
V
I
I
di/dt
t
t
T(AV)
T(RMS)
TSM
2
H
L
d
q
t1
t2
Type Number
t
2
T(TO)1
T(TO)2
TM
t
255RK
Parameter
Max. average on-state current
@ case temperature
Max. RMS on-state current
Max. peak one cycle
non-repetitive surge current
Maximum I
Maximum I
Low level value of threshold voltage
High level value of threshold voltage
Low level value of on state
slope resistance
High level value of on state
slope resistance
Max. on state voltage
Maximum holding current
Latching current
Parameter
Max. non-repetitive rate of rise
of turned-on current
Typical delay time
Typical turn-off time
2
2
t for fusing
Voltage
t for fusing
Code
160
100
120
140
20
40
60
80
SILICON CONTROLLED RECTIFIERS
V
RRM
/ V
and off-state vltage
DRM
, max. repetitive peak
1600
1000
1200
1400
200
400
600
800
V
255RK SERIES
255RK
255RK
2450
7000
5570
1000
1000
0.98
0.99
0.85
0.83
1.90
250
245
155
100
400
600
1.0
75
k A
Units
Units
kA
A/
m
mA
µ
0
A
A
V
V
C
µ
Ω
s
2
2
s
s
s
V
Conditions
180
t = 10ms
t = 10ms
t = 10ms
t = 10ms
t = 0.1 to 10ms. No voltage reapplied.
(16.7% x
(
(16.7% x
(
I
T
Conditions
Gate drive 20V, 20
T
Gate current 1A, di
V
I
dv/dt = 20V/
RSM
π
π
pk
TM
DC @ 64 Deg.C case Temp.
J
J
d
x I
x I
= 800A, T
= 25
= 125
= 0.67% V
= 550A, T
, max. non-repetitive
0
peak voltage
conduction, half sine wave
F(AV)
F(AV)
0
C, anode supply 12V resistive load
0
1700
C, anode voltage
1300
1500
1100
π
< I < 20 x
< I < 20 x
π
300
500
700
900
V
x I
x I
J
µ
J
DRM
s, Gate 0V 100
= 125
F(AV)
F(AV)
No voltage
reapplied
100% V
reapplied
No voltage
reapplied
100% V
reapplied
= 125
, T
< I <
<
Ω
J
g
0
/dt = 1A/
π
π
C, t
, tr
= 25
0
Ι < π
C, di/dt = 40A/
x I
x I
RRM
RRM
≤ 1 µ
p
π
F(AV)
F(AV)
0
= 10ms sine pulse
C
x I
x I
≤
), T
), T
µ
s
F(AV)
F(AV)
80% V
Sinusoidal half wave,
Initial T
Ω
s
, t
J
J
), T
), T
p
= T
= T
= 500
DRM
I
J
J
µ
DRM
J
J
J
= T
s, V
= T
= T
max.
max.
@ 125
/ I
J
µ
J
J
R
mA
s
RRM
50
max.
max.
max.
= 50V
0
max.
C
2