BAS70-05FILM STMicroelectronics, BAS70-05FILM Datasheet - Page 4
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BAS70-05FILM
Manufacturer Part Number
BAS70-05FILM
Description
IC DIODE SCHOTTKY SS SOT-23
Manufacturer
STMicroelectronics
Datasheet
1.BAS70-04FILM.pdf
(14 pages)
Specifications of BAS70-05FILM
Voltage - Forward (vf) (max) @ If
1V @ 15mA
Current - Reverse Leakage @ Vr
10µA @ 70V
Current - Average Rectified (io) (per Diode)
70mA (DC)
Voltage - Dc Reverse (vr) (max)
70V
Diode Type
Schottky
Speed
Small Signal =< 200mA (Io), Any Speed
Diode Configuration
1 Pair Common Cathode
Mounting Type
Surface Mount
Package / Case
SOT-23-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Other names
497-7159-2
BAS70-05FILM
BAS70-05FILM
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BAS70-05FILM
Manufacturer:
NXP
Quantity:
5 635
Part Number:
BAS70-05FILM
Manufacturer:
ST
Quantity:
20 000
Characteristics
4/14
Figure 7.
Figure 9.
Figure 11. Relative variation of thermal
1.00
0.10
0.01
1000
1.E+02
1.E+01
1.E+00
1.E-01
100
10
1.E-02
1.E-02
printed circuit board, epoxy FR4 e = 35 µm SOD-323
0.0
printed circuit board, epoxy FR4 e = 35 µm SOT-323-6L
Single pulse
SOD-323
Tj=125 °C
Forward voltage drop versus
forward current (typical values)
Relative variation of thermal
impedance junction to ambient
versus pulse duration
impedance junction to ambient
versus pulse duration
0.5
1.E-01
1.E-01
1.0
Tj=25 °C
1.5
1.E+00
1.E+00
t
P
(s)
V
CU
FM
CU
(V)
2.0
1.E+01
1.E+01
2.5
S
CU
EpoxyFR4
e
CU
=2.25 mm²
Single pulse
SOT-323-6L
=35 µm
3.0
t
P
(s)
Doc ID 12563 Rev 2
1.E+02
1.E+02
3.5
Figure 8.
Figure 10. Relative variation of thermal
Figure 12. Relative variation of thermal
1.00
0.10
0.01
1000
1.00
0.10
0.01
100
10
1.E-02
1.E-03
0.1
alluminium oxide substrate 10 x 8 x 0.5 mm SOT-23
R ( )
printed circuit board, epoxy FR4 e = 35 µm SOT-666
F
Single pulse
Single pulse
SOT-666
SOT-23
Ω
Differential forward resistance
versus forward current
(typical values)
impedance junction to ambient
versus pulse duration
impedance junction to ambient
versus pulse duration
1.E-01
1.E-02
1.E+00
1.E-01
I
F
(mA)
1.0
CU
1.E+01
1.E+00
Aluminesubstrate
10 x 8 x 0.5 mm
F=100 MHz
Epoxy FR4
e
Tj=25 °C
CU
=35 µm
t
P
t
(s)
P
(s)
1.E+02
1.E+01
BAS70
10.0