TISP3082-S Bourns Inc., TISP3082-S Datasheet - Page 11

• Manufacturer Part Number: TISP3082-S
• Description: Sidacs PROTECTOR DUAL SYMMETRICAL
• Manufacturer: Bourns Inc.

Specifications of TISP3082-S

• Breakover Current Ibo Max: 10 A
• Off-state Leakage Current @ Vdrm Idrm: 0.01 mA
• Forward Voltage Drop: 3 V
• Mounting Style: Through Hole
• Package / Case: TO-220
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

The protection voltage, (V
the rate of current rise, di/dt, when the TISP
conditions can be estimated by multiplying the 50 Hz rate V
7 ). An estimate of the di/dt can be made from the surge generator voltage rate of rise, dv/dt, and the circuit resistance.
As an example, the ITU-T K.21 1.5 kV, 10/700 µs surge has an average dv/dt of 150 V/µs, but, as the rise is exponential, the initial dv/dt
is higher, being in the region of 450 V/µs. The instantaneous generator output resistance is 25 Ω. If the equipment has an additional
series resistance of 20 Ω, the total series resistance becomes 45 Ω. The maximum di/dt then can be estimated as 450/45 = 10 A/µs. In
practice, the measured di/dt and protection voltage increase will be lower due to inductive effects and the finite slope resistance of the
TISP
Off-state Capacitance
The off-state capacitance of a TISP
V
variation of capacitance value with a.c. bias is shown in Figure 17. When V
V
MARCH 1994 - REVISED SEPTEMBER 2008
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
Protection Voltage
Capacitance
D
d
. The capacitance is essentially constant over the range of normal telecommunication frequencies.
, and the a.c. voltage, V
®
TISP3xxxF3 (HV) Overvoltage Protector Series
breakdown region.
(BO)
d
. All the capacitance values in this data sheet are measured with an a.c. voltage of 100 mV. The typical 25 °C
), increases under lightning surge conditions due to thyristor regeneration. This increase is dependent on
®
device is sensitive to junction temperature, T
1.05
1.00
0.95
0.90
0.85
0.80
0.75
0.70
1
®
Normalized to V
DC Bias, V
device is clamping the voltage in its breakdown region. The V
APPLICATIONS INFORMATION
NORMALIZED CAPACITANCE
V
d
RMS AC TEST VOLTAGE
- RMS AC Test Voltage - mV
D
= 0
10
(BO)
d
Figure 16.
= 100 mV
(250 V/ms) value by the normalized increase at the surge’s di/dt (Figure
vs
100
D
>> V
J
d
, and the bias voltage, comprising of the d.c. voltage,
, the capacitance value is independent on the value of
AIXXAA
1000
(BO)
value under surge