TICP106D-R-S Bourns Inc., TICP106D-R-S Datasheet - Page 2

• Manufacturer Part Number: TICP106D-R-S
• Description: Sidacs 400V 2A SCR
• Manufacturer: Bourns Inc.

Specifications of TICP106D-R-S

• Breakover Current Ibo Max: 15 A
• Rated Repetitive Off-state Voltage Vdrm: 400 V
• Off-state Leakage Current @ Vdrm Idrm: 0.02 mA
• Forward Voltage Drop: 1.5 V @ 1 A
• Maximum Operating Temperature: + 110 C
• Mounting Style: Through Hole
• Package / Case: TO-92
• Minimum Operating Temperature: - 40 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TICP106 SERIES
SILICON CONTROLLED RECTIFIERS
electrical characteristics at 25°C case temperature (unless otherwise noted)
NOTE
2
I
I
V
DRM
RRM
I
V
I
GT
GT
H
T
5: This parameter must be measured using pulse techniques, t
PARAMETER
Repetitive peak
off-state current
Repetitive peak
reverse current
Gate trigger current
Gate trigger voltage
Holding current
On-state voltage
the current carrying contacts, are located within 3.2 mm from the device body.
V
V
V
V
V
I
T
D
R
AA
AA
AA
= 1 A
= rated V
= rated V
= 12 V
= 12 V
= 12 V
DRM
RRM
R
I
R
R
R
R
(see Note 5)
TEST CONDITIONS
G
GK
L
L
GK
GK
= 0
= 100 Ω
= 100 Ω
= 1 kΩ
= 1 kΩ
= 1 kΩ
p
= 1 ms, duty cycle ≤ 2 %. Voltage sensing-contacts, separate from
R O D U C T
t
t
Initiating I
p(g)
p(g)
≥ 20 µs
≥ 20 µs
Specifications are subject to change without notice.
T
= 10 mA
MARCH 1988 - REVISED SEPTEMBER 2002
I N F O R M A T I O N
MIN
0.4
TYP
5
MAX
200
200
1.5
20
1
5
UNIT
mA
µA
µA
µA
V
V