BAV99WT1G ON Semiconductor, BAV99WT1G Datasheet
BAV99WT1G
Specifications of BAV99WT1G
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BAV99WT1G Summary of contents
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... RRM I 715 mA F(AV) I 450 mA FRM I A FSM 2.0 1.0 0.5 BAV99WT1 BAV99WT1G BAV99RWT1 BAV99RWT1G †For information on tape and reel specifications, Preferred devices are recommended choices for future use and best overall value. 1 http://onsemi.com ANODE CATHODE CATHODE/ANODE BAV99WT1 SC−70 CASE 419, STYLE 9 ...
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THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR−5 Board, (Note 1) T Derate above 25 C Thermal Resistance Junction−to−Ambient Total Device Dissipation Alumina Substrate, (Note 2) T Derate above 25 C Thermal Resistance Junction−to−Ambient Junction and Storage Temperature ELECTRICAL CHARACTERISTICS Characteristic ...
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CURVES APPLICABLE TO EACH DIODE 100 1 − 0.1 0.2 0.4 0.6 0 FORWARD VOLTAGE (VOLTS) F Figure 2. Forward Voltage 0.68 0.64 0.60 0.56 0.52 ...
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... H *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein ...