DAP222G ON Semiconductor, DAP222G Datasheet - Page 4

• Manufacturer Part Number: DAP222G
• Description: DIODE SWITCH DUAL CA 80V SC75-3
• Manufacturer: ON Semiconductor

Specifications of DAP222G

• Voltage - Forward (vf) (max) @ If: 1.2V @ 100mA
• Current - Reverse Leakage @ Vr: 100nA @ 70V
• Current - Average Rectified (io) (per Diode): 100mA (DC)
• Voltage - Dc Reverse (vr) (max): 80V
• Reverse Recovery Time (trr): 4ns
• Diode Type: Standard
• Speed: Small Signal =< 200mA (Io), Any Speed
• Diode Configuration: 1 Pair Common Anode
• Mounting Type: Surface Mount
• Package / Case: SC-75-3, SOT-416, EMT3, 3-SSMini
• Product: Switching Diodes
• Peak Reverse Voltage: 80 V
• Forward Continuous Current: 0.1 A
• Max Surge Current: 2 A
• Configuration: Dual Common Anode
• Recovery Time: 4 ns
• Forward Voltage Drop: 1.2 V
• Maximum Reverse Leakage Current: 0.1 uA
• Operating Temperature Range: + 150 C
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 55 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: DAP222GOSTR

0.20 (0.008)
b
3 PL
C
M
D
−E−
3
L
*For additional information on our Pb−Free strategy and soldering
2
1
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
e
H
1.803
0.071
A1
E
−D−
A
0.508
0.020
SOLDERING FOOTPRINT*
PACKAGE DIMENSIONS
0.20 (0.008) E
DAP222, DAP202U
SC−75 (SOT−416)
http://onsemi.com
CASE 463−01
ISSUE F
4
0.356
0.014
1.000
0.039
SCALE 10:1
0.787
0.031
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
2. CONTROLLING DIMENSION: MILLIMETER.
inches
Y14.5M, 1982.
STYLE 4:
mm
DIM
H
A1
PIN 1. CATHODE
A
C
D
b
E
e
L
E
2. CATHODE
3. ANODE
MIN
0.70
0.00
0.15
0.10
1.55
0.70
0.10
1.50
MILLIMETERS
1.00 BSC
NOM
0.80
0.05
0.20
0.15
1.60
0.80
0.15
1.60
MAX
0.90
0.10
0.30
0.25
1.65
0.90
0.20
1.70
0.027
0.000
0.006
0.004
0.059
0.027
0.004
0.061
MIN
0.04 BSC
INCHES
0.031 0.035
0.002 0.004
0.008 0.012
0.006 0.010
0.063 0.067
0.031 0.035
0.006 0.008
0.063 0.065
NOM
MAX