TISP6NTP2AD Bourns Inc., TISP6NTP2AD Datasheet - Page 3

• Manufacturer Part Number: TISP6NTP2AD
• Description: Sidacs Quad Buffered PGate Forward Conducting
• Manufacturer: Bourns Inc.

Specifications of TISP6NTP2AD

• Breakover Current Ibo Max: 7 A
• Rated Repetitive Off-state Voltage Vdrm: 100 V
• Off-state Leakage Current @ Vdrm Idrm: 0.005 mA
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
JUNE 1998 - REVISED JULY 2008
Recommended Operating Conditions
Electrical Characteristics for any Section, T A = 25
Thermal Characteristics
R
C
R1, R2
I
V
t
V
V
t
I
I
I
I
I
V
C
NOTE
D
H
GKS
GAT
GAF
GT
(BR)
FR
(BO)
F
FRM
GT
θ
G
AK
JA
TISP6NTP2A Programmable Protector
Junction to free air thermal resistance
3: These capacitance measurements employ a three terminal capacitance bridge incorporating a guard circuit. The unmeasured
Gate decoupling capacitor
Series resistor for GR-1089-CORE first-level surge survival
Series resistor for ITU-T recommendation K.20
Series resistor for ITU-T recommendation K.21
Series resistor for IEC 61000-4-5:1995, class 5, 1.2/50 or 10/700
Off-state current
Breakover voltage
Breakdown time
Forward voltage
Peak forward recovery
voltage
Forward recovery time
Holding current
Gate reverse current
Gate reverse current,
on state
Gate reverse current,
forward conducting
state
Gate trigger current
Gate trigger voltage
Anode-cathode off-
state capacitance
Parameter
device terminals are a.c. connected to the guard terminal of the bridge.
Parameter
V
I
V
I
I
I
I
I
V
I
I
V
I
V
I
I
I
I
f = 1 MHz, V
T
T
T
F
F
F
F
F
T
T
F
T
T
D
GG
GG
GG
GG
= -20 A, IEC 61000-4-5:1995 combination impulse generator,
= -18 A, I3124 impulse generator, V
= -18 A, I3124 impulse generator, V
= 0.6 A, t
= 18 A, t
= 20 A, IEC 61000-4-5:1995 combination impulse generator,
= 18 A, I3124 impulse generator, V
= 18 A, I3124 impulse generator,
= -1 A, di/dt = 1A/ms, V
= -0.6 A, t
= 0.6 A, t
= -5 A, t
= -5 A, t
= V
= -50 V
= -50 V
= -50 V
= V
DRM
GKRM
p(g)
p(g)
, I
w
w
w
w
G
d
= 500 µs, V
= 500 µs, V
, V
= 500 µs, V
≥
= 1 V, I
= 500 µs, V
≥
= 0
AK
20
20
= 0
µs, V
µs, V
G
°
C (Unless Otherwise Noted)
= 0, (see Note 3)
P
GG
GG
GG
GG
GG
tot
GG
GG
Test Conditions
= -50 V
= -50 V
= -50 V
= 0.52 W, T
= -50 V
= -50 V
= -50 V
= -50 V, T
GG
Test Conditions
GG
(BR)
J
A
= -50 V
= 85 °C
= -50 V
= 85 °C, 5 cm
< -50 V
2
, FR4 PCB
T
T
T
T
V
V
V
J
J
J
J
D
V
F
D
= 25 °C
= 85 °C
= 25 °C
= 85 °C
= -50 V
F
> 10 V
= -3 V
> 5 V
Min.
Min.
Min.
-150
100
40
12
20
4
Typ.
Typ.
Typ.
220
Max.
Max.
Max.
160
100
-50
-70
-70
-50
-40
2.5
15
15
60
-5
-5
-1
2
3
5
2
4
5
°C/W
Unit
Unit
Unit
mA
mA
mA
mA
nF
µA
µA
µA
µA
µs
µs
pF
pF
Ω
V
V
V
V