TISP61060P Bourns Inc., TISP61060P Datasheet - Page 6

• Manufacturer Part Number: TISP61060P
• Description: Sidacs
• Manufacturer: Bourns Inc.

Specifications of TISP61060P

• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TISP61060D, TISP61060P
DUAL FORWARD-CONDUCTING P-GATE THYRISTORS
PROGRAMMABLE OVERVOLTAGE PROTECTORS
ic based protectors
impulse protection performance
a.c. protection performance
6
and gate series diode. This means that the protection voltage level for slow wave forms will be about 1.5 V
lower than the SLIC supply voltage. If sufficient current is available from the overvoltage, then the thyristor will
switch into a low voltage on-state condition. When the thyristor crowbars, the two series gate diodes prevent
the SLIC supply from being shorted to ground via the thyristor gate. As the overvoltage subsides the high
holding current of the crowbar prevents d.c. latchup (see Figure 1).
The impulse protection voltage will be the sum of the gate supply (V
voltage (V
protection voltage will be increased if there is a long connection between the gate decoupling capacitor, C1,
and the gate terminal. During the initial rise of a fast impulse (e.g. 2/10), the gate current (I
the cathode current (I
track. To minimise this inductive voltage increase of protection voltage, the length of the capacitor to gate
terminal tracking should be minimised. Inductive voltages in the protector cathode wiring can increase the
protection voltage. These voltages can be minimised by routing the SLIC connection through the protector as
shown in Figure 2.
Figure 2 shows a typical a.c. power cross test circuit. A variable voltage a.c. source is applied to the line card
via 600
In 1986, an IC based gated protector was proposed (A 90 V Switching Regulator and Lightning Protection
Chip Set, Robert K. Chen, Thomas H. Lerch, Johnathan S. Radovsky, D. Alan Spires, IEEE Solid-State
Circuits Conference, February 20, 1986, pp 178/9 and pp 340/1). Commercially, this resulted in the AT&T
Microelectronics LB1201AB device and the higher current Texas Instruments Inc. TCM1060 device
This implementation consisted of four diodes and two high holding current thyristors. Positive overvoltages on
the line wires are clipped to ground by forward conduction of the wire to ground diodes. Negative overvoltages
are initially clipped close to the SLIC negative supply rail, V
provide over-current protection by fusing or going high resistance under high current a.c. conditions.
Figure 3 shows the gate and cathode a.c. power line cross voltage and current wave forms of the IC based
protector. Positive voltages are clipped at about +1 V by diode conduction. Negative voltages are clipped to
about -52 V as the SLIC supply voltage was -50 V. Sufficient current (200 mA) was available to cause the
GK(BO)
series resistors. On the line card there are further series resistors R1 and R2. These resistors
). Capacitor C1 provides the pulse of gate current that occurs during fast rising impulses. The
RESISTANCE
RESISTANCE
GENERATOR
GENERATOR
GENERATOR
GENERATOR
Figure 2. SIMPLIFIED IC BASED SLIC PROTECTOR CIRCUIT
0 - 600 Vrms
0 - 600 Vrms
SOURCE
SOURCE
600
600
600
600
K
A.C.
A.C.
). Rates of 70 A/µs can cause inductive voltages of 0.7 V in 2.5 cm of printed wiring
WIRE
WIRE
WIRE
WIRE
RING
RING
TIP
TIP
50
50
50
50
R1
R1
R2
R2
PROTECTOR
PROTECTOR
IC BASED
IC BASED
100 nF
100 nF
SLIC
SLIC
C1
C1
Th4
Th5
Th4
Th5
I
I
G
G
P R O D U C T
I
I
SLIC
SLIC
SLIC
SLIC
BAT
I
I
BAT
BAT
, by conduction of the thyristor cathode-gate
Specifications are subject to change without notice.
BAT
SEPTEMBER 1995 - REVISED AUGUST 2002
) and the impulse peak gate-cathode
SWITCHING MODE
SWITCHING MODE
V
V
D2
D2
POWER SUPPLY
POWER SUPPLY
BAT
BAT
C2
C2
D1
D1
I N F O R M A T I O N
Tx
Tx
AI6XAD
AI6XAD
G
) is the same as