BAS70-04LT1G ON Semiconductor, BAS70-04LT1G Datasheet

BAS70-04LT1G

Manufacturer Part Number

BAS70-04LT1G

Description

DIODE SCHOTTKY DUAL 70V SOT-23

Manufacturer

ON Semiconductor

Datasheets

1.BAS70-04LT1G.pdf (3 pages)

2.BAS70-04LT1G.pdf (3 pages)

Specifications of BAS70-04LT1G

Voltage - Forward (vf) (max) @ If

1V @ 15mA

Current - Reverse Leakage @ Vr

10µA @ 70V

Voltage - Dc Reverse (vr) (max)

70V

Diode Type

Schottky

Speed

Small Signal =< 200mA (Io), Any Speed

Diode Configuration

1 Pair Series Connection

Mounting Type

Surface Mount

Package / Case

SOT-23-3, TO-236-3, Micro3™, SSD3, SST3

Product

Schottky Diodes

Peak Reverse Voltage

70 V

Forward Continuous Current

0.07 A

Configuration

Dual Series

Forward Voltage Drop

1 V @ 0.015 A

Maximum Reverse Leakage Current

10 uA

Operating Temperature Range

- 55 C to + 150 C

Mounting Style

SMD/SMT

Capacitance, Junction

2 pF

Current, Surge

100 mA

Package Type

SOT-23 (TO-236AB)

Power Dissipation

225 mW

Primary Type

Schottky Barrier

Speed, Switching

Fast

Temperature, Junction, Maximum

+150 °C

Temperature, Operating

-55 to +150 °C

Voltage, Forward

1 V

Voltage, Reverse

70 V

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Reverse Recovery Time (trr)

Current - Average Rectified (io) (per Diode)

Lead Free Status / Rohs Status

Lead free / RoHS Compliant

Other names

BAS70-04LT1GOSTR

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

BAS70-04LT1G

Manufacturer:

ANPEC

Quantity:

1 400

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

BAS70-04LT1G

Manufacturer:

ON Semiconductor

Quantity:

311 825

Company:

Meier Automation Equipment Co., Limited

Part Number:

BAS70-04LT1G

Manufacturer:

ON/安森美

Quantity:

20 000

Company:

H&T Electronics

Part Number:

BAS70-04LT1G

Quantity:

6 000

Current page: 1 of 3
Download datasheet (119Kb)

BAS70-04LT1G

Dual Series

Schottky Barrier Diode

applications, circuit protection, and voltage clamping. Extremely low

forward voltage reduces conduction loss. Miniature surface mount

package is excellent for hand held and portable applications where

space is limited.

Features

•

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. FR−4 @ minimum pad.

2. FR−4 @ 1.0 x 1.0 in pad.

MAXIMUM RATINGS

THERMAL CHARACTERISTICS

August, 2009 − Rev. 9

Thermal Resistance

Junction−to−Ambient

Reverse Voltage

Non−Repetitive Peak Forward

Forward Power Dissipation

Operating Junction and Storage

These Schottky barrier diodes are designed for high speed switching

Compliant

Extremely Fast Switching Speed

Low Forward Voltage

These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Surge Current (t ≤ 1.0 s)

@ T

Derate above 25°C

Temperature Range

= 25°C

Characteristic

Rating

= 150°C unless otherwise noted)

Symbol

FSM

, T

qJA

stg

−55 to +150

(Note 1)

(Note 2)

Value

Max

100

225

508

311

1.8

mW/°C

°C/W

Unit

°C

†For information on tape and reel specifications,

BAS70−04LT1G

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

*Date Code orientation and/or overbar may

vary depending upon manufacturing location.

Device

(Note: Microdot may be in either location)

ANODE

70 VOLTS SCHOTTKY

ORDERING INFORMATION

CG = Specific Device Code

BARRIER DIODE

MARKING DIAGRAM

http://onsemi.com

= Date Code*

= Pb−Free Package

CATHODE/ANODE

(Pb−Free)

Package

SOT−23

CG M G

Publication Order Number:

(TO−236AB)

CASE 318

CATHODE

3000 / Tape & Reel

SOT−23

BAS70−04LT1/D

Shipping

†

Related parts for BAS70-04LT1G

BAS70-04LT1G Summary of contents

Page 1

... BAS70-04LT1G Dual Series Schottky Barrier Diode These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited ...

Page 2

ELECTRICAL CHARACTERISTICS (T Characteristic Reverse Breakdown Voltage ( μA) R Total Capacitance ( 1.0 MHz) R Reverse Leakage ( Forward Voltage (I = 1.0 ...

Page 3

... E STYLE 8: PIN 1. ANODE 2. NO CONNECTION 3. CATHODE 2.0 mm inches ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative BAS70−04LT1/D MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 ...

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