MCR708A ON Semiconductor, MCR708A Datasheet - Page 3

• Manufacturer Part Number: MCR708A
• Description: SCRs 600V 4A
• Manufacturer: ON Semiconductor

Specifications of MCR708A

• Breakover Current Ibo Max: 35 A
• Rated Repetitive Off-state Voltage Vdrm: 600 V
• Off-state Leakage Current @ Vdrm Idrm: 0.01 mA
• Forward Voltage Drop: 2.2 V
• Gate Trigger Voltage (vgt): 0.8 V
• Maximum Gate Peak Inverse Voltage: 18 V
• Gate Trigger Current (igt): 0.075 mA
• Holding Current (ih Max): 5 mA
• Mounting Style: SMD/SMT
• Package / Case: TO-252-3 (DPAK)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

100
105
100
1.0
0.1
110
Symbol
V
I
V
I
V
I
10
DRM
RRM
H
95
DRM
RRM
TM
0.5
0
Typical @ T
1.0
V
T
Figure 3. On−State Characteristics
, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)
Parameter
Peak Repetitive Off−State Forward Voltage
Peak Forward Blocking Current
Peak Repetitive Off−State Reverse Voltage
Peak Reverse Blocking Current
Peak On−State Voltage
Holding Current
Figure 1. RMS Current Derating
I
1.0
T(RMS)
J
= 25°C
Maximum @ T
1.5
, RMS ON-STATE CURRENT (AMPS)
2.0
2.0
J
= 25°C
2.5
3.0
3.0
Voltage Current Characteristic of SCR
Maximum @ T
30°
DC
3.5
4.0
J
= 110°C
4.0
60°
90°
120°
180°
http://onsemi.com
4.5
5.0
I
Reverse Avalanche Region
Anode −
RRM
Reverse Blocking Region
3
at V
0.01
1.0
0.1
RRM
5.0
4.0
3.0
2.0
1.0
(off state)
0
0.1
0
Figure 4. Transient Thermal Response
on state
Figure 2. On−State Power Dissipation
1.0
I
1.0
T(RMS)
+ Current
, RMS ON-STATE CURRENT (AMPS)
Forward Blocking Region
I
H
10
2.0
t, TIME (ms)
V
TM
(off state)
I
100
DRM
3.0
Anode +
at V
Z
qJC(t)
DRM
1000
= R
+ Voltage
4.0
qJC(t)
DC
180°
120°
90°
60°
30°
•r(t)
10,000
5.0