MMT10B230T3 ON Semiconductor, MMT10B230T3 Datasheet - Page 3

Sidacs 100A Surge 265V

MMT10B230T3

Manufacturer Part Number
MMT10B230T3
Description
Sidacs 100A Surge 265V
Manufacturer
ON Semiconductor
Datasheet

Specifications of MMT10B230T3

Breakover Current Ibo Max
500 A
Rated Repetitive Off-state Voltage Vdrm
170 V
Off-state Leakage Current @ Vdrm Idrm
0.005 mA
Forward Voltage Drop
5 V
Mounting Style
SMD/SMT
Package / Case
SMB
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MMT10B230T3
Manufacturer:
MOT
Quantity:
3 031
Part Number:
MMT10B230T3G
Manufacturer:
ON
Quantity:
5 000
Part Number:
MMT10B230T3G
Manufacturer:
ON
Quantity:
30 000
Part Number:
MMT10B230T3G
Manufacturer:
ON/安森美
Quantity:
20 000
3. Measured under pulse conditions to reduce heating.
ELECTRICAL CHARACTERISTICS
Devices are bidirectional. All electrical parameters apply to forward and reverse polarities.
Breakover Voltage (Both polarities)
Breakover Voltage (Both polarities)
Breakover Voltage Temperature Coefficient
Breakdown Voltage (I
Off State Current (V
Off State Current
On−State Voltage (I
Breakover Current (f = 60 Hz, V
Holding Current (Both polarities)
Critical Rate of Rise of Off−State Voltage
Capacitance (f = 1.0 MHz, 50 Vdc, 1.0 V rms Signal)
Capacitance
(dv/dt = 100 V/ms, I
(+65°C)
(f = 60 Hz, I
R
(+65°C)
(PW ≤ 300 ms, Duty Cycle ≤ 2%) (Note 3)
Both polarities
V
(Linear waveform, V
S
I
Symbol
I
V
V
V
I
I
V
D1
BO
H
= 1.0 kW, t = 0.5 cycle) (Note 3)
= 500 Volts; I
D1
BR
BO
TM
, I
, V
D2
D2
(f = 1.0 MHz, 2.0 Vdc, 15 mV rms Signal)
SC
= 1.0 A(rms), V
Parameter
Off State Leakage Current
Off State Blocking Voltage
Breakdown Voltage
Breakover Voltage
Breakover Current
Holding Current
On State Voltage
(V
T
T
D1
D2
(Initiating Current) = "1.0 A
SC
(BR)
= 1.0 A)
D
= 50 V) Both polarities
= V
= 1.0 A, Vdc = 1000 V)
= Rated V
= 1.0 mA) Both polarities
DM
) Both polarities
Characteristic
MMT10B230T3, MMT10B260T3, MMT10B310T3
DM
OC
BR
= 1000 V(rms), R
= 1000 V(rms), MMT10B230T3, G
, T
(T
J
Voltage Current Characteristic of TSPD
= 25°C)
J
= 25°C unless otherwise noted)
S
(Bidirectional Device)
MMT10B230T3, G
MMT10B260T3, G
MMT10B310T3, G
MMT10B230T3, G
MMT10B260T3, G
MMT10B310T3, G
MMT10B260T3, G
MMT10B310T3, G
MMT10B230T3, G
MMT10B260T3, G
MMT10B310T3, G
MMT10B230T3, G
MMT10B260T3, G
MMT10B310T3, G
= 1.0 kW)
(Note 3)
http://onsemi.com
3
dV
Symbol
V
V
(BO)
V
dv/dt
I
I
I
C
V
(BO)
(BO)
(BR)
BO
I
D1
D2
H
T
O
/dT
J
I
+ Current
H
2000
Min
150
I
V
D1
D1
V
TM
I
D2
V
0.08
1.53
Typ
190
240
280
260
270
160
D2
65
V
V
(BR)
(BO)
Max
265
320
365
290
340
400
265
320
365
290
340
400
200
2.0
5.0
5.0
+ Voltage
I
(BO)
%/°C
V/ms
Unit
mA
mA
mA
pF
V
V
V
V

Related parts for MMT10B230T3