BT136S-800E /T3 NXP Semiconductors, BT136S-800E /T3 Datasheet - Page 5

• Manufacturer Part Number: BT136S-800E /T3
• Description: Triacs TAPE13 TRIAC
• Manufacturer: NXP Semiconductors

Specifications of BT136S-800E /T3

• Rated Repetitive Off-state Voltage Vdrm: 800 V
• Breakover Current Ibo Max: 27 A
• Off-state Leakage Current @ Vdrm Idrm: 0.5 mA
• Gate Trigger Voltage (vgt): 1.5 V
• Gate Trigger Current (igt): 25 mA
• Holding Current (ih Max): 15 mA
• Forward Voltage Drop: 1.7 V @ 5 A
• Mounting Style: SMD/SMT
• Package / Case: SOT-428
• Repetitive Peak Forward Blocking Voltage: 800 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BT136S-800E,118

NXP Semiconductors
5. Thermal characteristics
Table 5.
BT136S-800E
Product data sheet
Symbol
R
R
Fig 5.
Fig 6.
th(j-mb)
th(j-a)
Z
(K/W)
th(j-mb)
I
TSM
(A)
10
10
10
10
10
10
1
3
2
1
2
10
10
t
(1) dI
(2) T2- G+ quadrant limit
Non-repetitive peak on-state current as a function of pulse width; maximum values
Transient thermal impedance from junction to mounting base as a function of pulse width
p
5
5
Thermal characteristics
≤ 20 ms
T
/dt limit
Parameter
thermal resistance from junction
to mounting base
thermal resistance from junction
to ambient
(2)
10
4
(1)
10
4
unidirectional
All information provided in this document is subject to legal disclaimers.
10
3
Rev. 3 — 30 March 2011
Conditions
half cycle; see
full cycle; see
in free air; printed circuit board (FR4)
mounted; standard footprint,
single-sided copper, tin-plated
10
10
3
2
bidirectional
Figure 6
Figure 6
10
1
10
2
BT136S-800E
I
T
1
P
T
Min
-
-
-
j(init)
t
p
(s)
= 25 C max
t
p
t
p
t p
© NXP B.V. 2011. All rights reserved.
Typ
-
-
75
(s)
003aae829
003aae836
I
TSM
t
t
Max
3.7
3
-
10
10
4Q Triac
1
Unit
K/W
K/W
K/W
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