BT137X-600 NXP Semiconductors, BT137X-600 Datasheet - Page 5

• Manufacturer Part Number: BT137X-600
• Description: Triacs RAIL TRIAC
• Manufacturer: NXP Semiconductors

Specifications of BT137X-600

• Rated Repetitive Off-state Voltage Vdrm: 600 V
• Breakover Current Ibo Max: 71 A
• Off-state Leakage Current @ Vdrm Idrm: 0.5 mA
• Gate Trigger Voltage (vgt): 1.5 V
• Gate Trigger Current (igt): 70 mA
• Holding Current (ih Max): 20 mA
• Forward Voltage Drop: 1.65 V @ 10A
• Mounting Style: SMD/SMT
• Package / Case: SOT-186A
• Repetitive Peak Forward Blocking Voltage: 600 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BT137X-600,127

Philips Semiconductors
June 2001
Triacs
Fig.8. Normalised latching current I
Fig.9. Normalised holding current I
2.5
1.5
0.5
2.5
1.5
0.5
I
GT
3
2
1
0
2.5
1.5
0.5
3
2
1
0
-50
-50
(T
3
2
1
0
IGT(25 C)
IL(25 C)
-50
IGT(Tj)
IL(Tj)
IH(25C)
IH(Tj)
Fig.7. Normalised gate trigger current
j
)/ I
GT
versus junction temperature T
versus junction temperature T
(25˚C), versus junction temperature T
0
0
0
Tj / C
Tj / C
Tj / C
50
50
50
100
100
T2+ G+
T2+ G-
T2- G-
T2- G+
100
H
L
(T
(T
j
j
)/ I
)/ I
j
j
.
.
H
L
(25˚C),
(25˚C),
150
150
150
j
.
5
Fig.10. Typical and maximum on-state characteristic.
temperature, parameter commutation dI
should commutate when the dV/dt is below the value
on the appropriate curve for pre-commutation dI
Fig.11. Transient thermal impedance Z
Fig.12. Typical commutation dV/dt versus junction
1000
25
20
15
10
100
0.01
5
0
10
0.1
10
1
0
10us
IT / A
1
0
Rs = 0.0378 Ohms
dV/dt (V/us)
Vo = 1.264 V
Tj = 125 C
Zth j-hs (K/W)
Tj = 25 C
with heatsink compound
without heatsink compound
dIcom/dt =
10 A/ms
0.5
0.1ms
unidirectional
7.9
pulse width t
1ms
1
50
6.1
tp / s
VT / V
10ms
Tj / C
typ
1.5
4.7
bidirectional
P
D
3.6
p
BT137X series
0.1s
.
100
Product specification
2
t p
2.8
off-state dV/dt limit
BT137...G SERIES
BT137...F SERIES
max
BT137 SERIES
T
1s
2.5
th j-hs
/dt. The triac
t
, versus
Rev 1.400
10s
150
3
T
/dt.