BTA412Y-800B NXP Semiconductors, BTA412Y-800B Datasheet - Page 4
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BTA412Y-800B
Manufacturer Part Number
BTA412Y-800B
Description
Triacs RAIL-THYR AND TRIACS
Manufacturer
NXP Semiconductors
Datasheet
1.BTA412Y-800C.pdf
(12 pages)
Specifications of BTA412Y-800B
Rated Repetitive Off-state Voltage Vdrm
800 V
Breakover Current Ibo Max
153 A
Off-state Leakage Current @ Vdrm Idrm
2 mA
Gate Trigger Voltage (vgt)
1.5 V
Gate Trigger Current (igt)
50 mA
Holding Current (ih Max)
60 mA
Forward Voltage Drop
1.5 V @ 18 A
Mounting Style
Through Hole
Package / Case
TO-220
Repetitive Peak Forward Blocking Voltage
800 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BTA412Y-800B,127
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BTA412Y-800B
Manufacturer:
NXP
Quantity:
11 550
Part Number:
BTA412Y-800B127
Manufacturer:
NXO
Quantity:
20 000
NXP Semiconductors
BTA412Y_SER_B_C_2
Product data sheet
Fig 3.
Fig 4.
I
T(RMS)
I
(A)
TSM
(A)
(1) dI
10
10
10
40
30
20
10
3
2
0
10
10
t
Non-repetitive peak on-state current as a function of pulse duration; maximum values
f = 50 Hz
T
RMS on-state current as a function of surge
duration; maximum values
p
-5
-2
mb
T
/dt limit
20 ms
= 116 C
10
(1)
-1
10
-4
1
surge duration (s)
12 A 3-quadrant triacs, insulated, high commutation, high temperature
003aab813
10
Rev. 02 — 11 March 2008
10
-3
Fig 5.
BTA412Y series B and C
I
T(RMS)
(A)
15
10
5
0
-50
RMS on-state current as a function of
mounting base temperature; maximum values
0
10
-2
50
I
T
T
j(init)
= 25 C max
t
p
100
t
p
© NXP B.V. 2008. All rights reserved.
(s)
T
003aab812
003aab814
I
TSM
mb
t
( C)
10
150
-1
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