Z0409DE 1AA2 STMicroelectronics, Z0409DE 1AA2 Datasheet - Page 3
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Z0409DE 1AA2
Manufacturer Part Number
Z0409DE 1AA2
Description
Triacs RO 519-Q4004F31
Manufacturer
STMicroelectronics
Datasheet
1.Z0405BE_1AA2.pdf
(8 pages)
Specifications of Z0409DE 1AA2
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Z04
Figure 1.
Figure 3.
Figure 5.
7
6
5
4
3
2
1
0
1E+0
25
20
15
10
1E-2
1E-3
1E-1
0.0
5
0
P(W)
I
1
TSM
1E-3
K=[Z
0.5
(A)
th(j-a)
T
Repetitive
amb
Maximum power dissipation
versus RMS on-state current
(full cycle)
Relative variation of thermal
impedance versus pulse
duration
Surge peak on-state current
versus number of cycles
1E-2
= 25°C
1.0
/R
th(j-a) ]
10
Number of cycles
1.5
1E-1
T initial = 25°C
Non repetitive
j
I
T(RMS)
t (s)
2.0
p
1E+0
(A)
2.5
100
1E+1
3.0
t=20ms
One cycle
1E+2
3.5
5E+2
1000
4.0
Figure 2.
Figure 4.
Figure 6.
2.5
2.0
1.5
1.0
0.5
0.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
500
100
10
1
-40
0.01
0
I
I
GT H L
I
T(RMS)
TSM
I
, I , I [T ] /
H
dI/dt limitation:
& I
-20
L
(A), I t (A s)
20A/µs
R
(A)
th(j-a)
RMS on-state current versus
ambient temperature (full cycle)
Relative variation of gate trigger
current, holding current and
latching current versus junction
temperature (typical values)
Non-repetitive surge peak on-state
current for a sinusoidal pulse with
width t
value of I
2
25
= 100°C/W
j
0
I
GT
I
2
GT H L
0.10
, I , I [T =25°C]
20
p
R
th(j-a)
< 10 ms and corresponding
50
2
=
t
T
R
40
th(j-l)
t (ms)
amb
T (°C)
p
j
j
(°C)
60
75
1.00
80
Characteristics
100
100
I
T initial = 25°C
TSM
j
I t
2
120
10.00
125
140
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