BT131-800E NXP Semiconductors, BT131-800E Datasheet - Page 3

• Manufacturer Part Number: BT131-800E
• Description: Triacs TRIAC
• Manufacturer: NXP Semiconductors

Specifications of BT131-800E

• Rated Repetitive Off-state Voltage Vdrm: 800 V
• Breakover Current Ibo Max: 13.7 A
• Off-state Leakage Current @ Vdrm Idrm: 0.5 mA
• Gate Trigger Voltage (vgt): 1.5 V
• Gate Trigger Current (igt): 10 mA
• Holding Current (ih Max): 10 mA
• Forward Voltage Drop: 1.5 V @ 1.4A
• Mounting Style: SMD/SMT
• Package / Case: SOT-54
• Repetitive Peak Forward Blocking Voltage: 800 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BT131-800E,412

Philips Semiconductors
BT131_SER_D_E_2
Product data sheet
Fig 1. Total power dissipation as a function of RMS on-state current; maximum values
Fig 2. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
I
TSM
(A)
P
(W)
1.5
tot
0.5
16
12
1
0
8
4
0
a = form factor = I
f = 50 Hz
values
1
0
T(RMS)
0.2
/ I
T(AV)
0.4
10
Rev. 02 — 17 November 2005
0.6
BT131 series D and E
10
0.8
2
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
I
T
n
1
120
90
60
30
T
j
=180
= 25 C max
I
T(RMS)
T
Triacs logic level
003aab038
003aab041
(A)
I
TSM
t
1.2
10
3
T
35
95
125
65
lead(max)
( C)
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