BT138-600E NXP Semiconductors, BT138-600E Datasheet - Page 3

• Manufacturer Part Number: BT138-600E
• Description: Triacs RAIL TRIAC
• Manufacturer: NXP Semiconductors

Specifications of BT138-600E

• Rated Repetitive Off-state Voltage Vdrm: 600 V
• Breakover Current Ibo Max: 105 A
• Off-state Leakage Current @ Vdrm Idrm: 0.5 mA
• Gate Trigger Voltage (vgt): 1.5 V
• Gate Trigger Current (igt): 25 mA
• Holding Current (ih Max): 30 mA
• Forward Voltage Drop: 1.65 V @ 15 A
• Mounting Style: SMD/SMT
• Package / Case: SOT-78
• Repetitive Peak Forward Blocking Voltage: 600 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BT138-600E,127

NXP Semiconductors
Table 3.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
BT138_SER _D_E_2
Product data sheet
Symbol
dI
I
P
P
T
T
GM
Fig 1.
GM
G(AV)
stg
j
T
/dt
Although not recommended, off-state voltages up to 800 V may be applied without damage, but the triac may switch to the on-state. The
rate of rise of current should not exceed 15 A/ s.
P
(W)
tot
20
15
10
5
0
Total power dissipation as a function of RMS on-state current; maximum values
0
Limiting values
= conduction angle
conduction
(degrees)
Parameter
rate of rise of on-state current
peak gate current
peak gate power
average gate power
storage temperature
junction temperature
angle
120
180
30
60
90
factor
form
1.57
2.8
2.2
1.9
a
4
2
…continued
4
Rev. 02 — 12 March 2008
Conditions
I
dI
over any 20 ms period
TM
6
G
T2+ G+
T2+ G
T2 G
T2 G+
/dt = 0.2 A/ s
= 20 A; I
G
= 0.2 A;
8
BT138 series D and E
12 A four-quadrant triacs, sensitive gate
10
Min
-
-
-
-
-
-
-
-
40
12
120
= 180
90
60
30
I
T(RMS)
© NXP B.V. 2008. All rights reserved.
Max
50
50
50
10
2
5
+150
0.5
125
003aac220
(A)
14
Unit
A/ s
A/ s
A/ s
A/ s
A
W
W
C
C
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