BT136S-600E /T3 NXP Semiconductors, BT136S-600E /T3 Datasheet - Page 2

• Manufacturer Part Number: BT136S-600E /T3
• Description: Triacs TAPE13 TRIAC
• Manufacturer: NXP Semiconductors

Specifications of BT136S-600E /T3

• Rated Repetitive Off-state Voltage Vdrm: 600 V
• Breakover Current Ibo Max: 27 A
• Off-state Leakage Current @ Vdrm Idrm: 0.5 mA
• Gate Trigger Voltage (vgt): 1.5 V
• Gate Trigger Current (igt): 25 mA
• Holding Current (ih Max): 15 mA
• Forward Voltage Drop: 1.7 V @ 5 A
• Mounting Style: SMD/SMT
• Package / Case: SOT-428
• Repetitive Peak Forward Blocking Voltage: 600 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BT136S-600E,118

NXP Semiconductors
2. Pinning information
Table 2.
3. Ordering information
Table 3.
BT136S-600E
Product data sheet
Pin
1
2
3
mb
Type number
BT136S-600E
Symbol Description
T1
T2
G
T2
Pinning information
Ordering information
main terminal 1
main terminal 2
gate
mounting base; main terminal 2
Table 1.
Package
Name
DPAK
Symbol
Static characteristics
I
I
GT
H
Quick reference data
Parameter
gate trigger current
holding current
Description
plastic single-ended surface-mounted package (DPAK); 3 leads
(one lead cropped)
All information provided in this document is subject to legal disclaimers.
Rev. 03 — 31 March 2011
Simplified outline
…continued
Conditions
V
T
V
T
V
T
V
T
V
see
j
j
j
j
D
D
D
D
D
SOT428 (DPAK)
= 25 °C; see
= 25 °C; see
= 25 °C; see
= 25 °C; see
= 12 V; I
= 12 V; I
= 12 V; I
= 12 V; I
= 12 V; T
Figure 9
1
mb
2
T
T
T
T
j
3
= 0.1 A; T2+ G+;
= 0.1 A; T2+ G-;
= 0.1 A; T2- G-;
= 0.1 A; T2- G+;
= 25 °C;
Figure 7
Figure 7
Figure 7
Figure 7
Graphic symbol
BT136S-600E
Min
-
-
-
-
-
T2
sym051
© NXP B.V. 2011. All rights reserved.
Typ
2.5
4
5
11
2.2
Version
SOT428
T1
G
Max Unit
10
10
10
25
15
4Q Triac
2 of 15
mA
mA
mA
mA
mA