BT138-800G NXP Semiconductors, BT138-800G Datasheet - Page 4

• Manufacturer Part Number: BT138-800G
• Description: Triacs RAIL TRIAC
• Manufacturer: NXP Semiconductors

Specifications of BT138-800G

• Rated Repetitive Off-state Voltage Vdrm: 800 V
• Breakover Current Ibo Max: 105 A
• Off-state Leakage Current @ Vdrm Idrm: 0.5 mA
• Gate Trigger Voltage (vgt): 1.5 V
• Gate Trigger Current (igt): 100 mA
• Holding Current (ih Max): 60 mA
• Forward Voltage Drop: 1.65 V @ 15 A
• Mounting Style: SMD/SMT
• Package / Case: SOT-78
• Repetitive Peak Forward Blocking Voltage: 800 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BT138-800G,127

Philips Semiconductors
June 2001
Triacs
Fig.8. Normalised latching current I
Fig.9. Normalised holding current I
2.5
1.5
0.5
2.5
1.5
0.5
I
GT
2.5
1.5
0.5
3
2
1
0
3
2
1
0
-50
-50
3
2
1
0
(T
IGT(25 C)
IL(25 C)
-50
IGT(Tj)
IL(Tj)
IH(25C)
IH(Tj)
j
Fig.7. Normalised gate trigger current
)/ I
GT
versus junction temperature T
versus junction temperature T
(25˚C), versus junction temperature T
0
0
0
Tj / C
Tj / C
Tj / C
50
50
50
100
T2+ G+
T2+ G-
T2- G-
T2- G+
100
100
H
L
(T
(T
j
j
)/ I
)/ I
j
j
.
.
H
L
(25˚C),
(25˚C),
150
150
150
j
.
4
Fig.10. Typical and maximum on-state characteristic.
temperature, parameter commutation dI
should commutate when the dV/dt is below the value
on the appropriate curve for pre-commutation dI
Fig.11. Transient thermal impedance Z
Fig.12. Typical commutation dV/dt versus junction
1000
0.001
40
30
20
10
100
0.01
0
10
0.1
1
0
10
10us
IT / A
0
1
Rs = 0.0316 Ohms
Vo = 1.175 V
dV/dt (V/us)
Tj = 125 C
Zth j-mb (K/W)
Tj = 25 C
dIcom/dt =
15 A/ms
0.5
0.1ms
12
unidirectional
pulse width t
1ms
1
50
tp / s
9.1
VT / V
Tj / C
10ms
1.5
7
typ
P
D
5.4
bidirectional
p
.
0.1s
100
Product specification
2
t p
BT138 series
4.2
off-state dV/dt limit
BT138...G SERIES
BT138...F SERIES
BT138 SERIES
T
th j-mb
2.5
1s
/dt. The triac
max
t
Rev 1.400
, versus
10s
150
3
T
/dt.