MCR100-006 ON Semiconductor, MCR100-006 Datasheet - Page 2

• Manufacturer Part Number: MCR100-006
• Description: SCRs 400V 800mA
• Manufacturer: ON Semiconductor

Specifications of MCR100-006

• Breakover Current Ibo Max: 10 A
• Rated Repetitive Off-state Voltage Vdrm: 400 V
• Off-state Leakage Current @ Vdrm Idrm: 0.01 mA
• Forward Voltage Drop: 1.7 V
• Gate Trigger Voltage (vgt): 0.8 V
• Maximum Gate Peak Inverse Voltage: 5 V
• Gate Trigger Current (igt): 0.2 mA
• Holding Current (ih Max): 5 mA
• Mounting Style: Through Hole
• Package / Case: TO-92-3 (TO-226)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. V
2. See ordering information for exact device number options.
*Indicates Pulse Test: Pulse Width ≤ 1.0 ms, Duty Cycle ≤ 1%.
3. R
4. Does not include R
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
Peak Repetitive Off−State Voltage (Notes 1 and 2)
On-State RMS Current, (T
Peak Non-Repetitive Surge Current, (1/2 Cycle, Sine Wave, 60 Hz, T
Circuit Fusing Consideration, (t = 8.3 ms)
Forward Peak Gate Power, (T
Forward Average Gate Power, (T
Forward Peak Gate Current, (T
Reverse Peak Gate Voltage, (T
Operating Junction Temperature Range @ Rate V
Storage Temperature Range
Thermal Resistance,Junction−to−Case
Lead Solder Temperature
Peak Repetitive Forward or Reverse Blocking Current (Note 3)
Peak Forward On−State Voltage
Gate Trigger Current (Note 4)
Holding Current (Note 3)
Latch Current (Note 4)
Gate Trigger Voltage (Note 4)
Critical Rate of Rise of Off−State Voltage
Critical Rate of Rise of On−State Current
voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current
source such that the voltage ratings of the devices are exceeded.
(T
(t1/16″ from case, 10 secs max)
(V
(I
(V
(V
(V
(V
(V
(I
DRM
GK
TM
PK
J
AK
AK
AK
AK
D
D
= *40 to 110°C, Sine Wave, 50 to 60 Hz; R
= 1000 W included in measurement.
= Rated V
= Rated V
= 20 A; Pw = 10 msec; diG/dt = 1 A/msec, Igt = 20 mA)
= 1.0 A Peak @ T
and V
= 7.0 Vdc, R
= 7.0 Vdc, Initiating Current = 20 mA, R
= 7.0 V, Ig = 200 mA)
= 7.0 Vdc, R
RRM
DRM
DRM
for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate
L
L
GK
, Exponential Waveform, R
Junction−to−Ambient
and V
= 100 W)
= 100 W)
(T
in measurement.
A
J
C
= 25°C)
= 25°C unless otherwise noted)
RRM
= 80°C) 180° Conduction Angles
Characteristic
A
A
; R
= 25°C, Pulse Width v 1.0
A
A
= 25°C, Pulse Width v 1.0
*
Characteristic
= 25°C, Pulse Width v 1.0
GK
= 25°C, t = 8.3 ms)
T
T
T
Rating
C
C
C
= 1 kW)
= 25°C
= 25°C
= −40°C
(T
C
= 25°C unless otherwise noted)
GK
GK
GK
RRM
= 1 kW) T
= 1 kW,T
= 1 kW)
and V
http://onsemi.com
m
J
T
T
T
s)
m
DRM
= 110°C)
T
T
C
C
C
C
m
s)
C
C
s)
= 25°C
= −40°C
= 25°C
= −40°C
= 25°C
= 110°C
MCR100−3
MCR100−4
MCR100−6
MCR100−8
2
J
= 25°C)
I
DRM
Symbol
dV/dt
di/dt
V
V
I
GT
I
I
, I
TM
GT
H
L
RRM
Symbol
Symbol
I
P
V
V
T(RMS)
V
R
R
I
P
T
G(AV)
I
DRM,
TSM
RRM
GRM
I
GM
T
T
qJC
GM
stg
qJA
2
L
J
t
Min
20
−
−
−
−
−
−
−
−
−
−
−
−40 to 110
−40 to 150
Value
0.415
0.01
Max
0.62
100
200
400
600
200
260
Typ
0.8
0.1
1.0
5.0
0.5
0.6
10
75
40
35
−
−
−
−
−
−
−
Max
100
200
1.7
5.0
0.8
1.2
10
10
10
15
50
−
°C/W
Unit
Unit
A
°C
°C
°C
W
W
V
A
A
A
V
2
s
V/ms
A/ms
Unit
mA
mA
mA
mA
V
V