MKP3V240 ON Semiconductor, MKP3V240 Datasheet - Page 2

• Manufacturer Part Number: MKP3V240
• Description: Sidacs 240V 0.9A Trigger
• Manufacturer: ON Semiconductor

Specifications of MKP3V240

• Breakover Current Ibo Max: 20 A
• Rated Repetitive Off-state Voltage Vdrm: 180 V
• Off-state Leakage Current @ Vdrm Idrm: 0.01 mA
• Forward Voltage Drop: 1.5 V
• Mounting Style: Through Hole
• Package / Case: DO-204AD
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ELECTRICAL CHARACTERISTICS (T
OFF CHARACTERISTICS
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
Repetitive Peak Off-State Current
Breakover Voltage, I
Breakover Current
Peak On-State Voltage
Dynamic Holding Current
Switching Resistance
Critical Rate-of-Rise of On-State Current,
(50 to 60 Hz Sine Wave)
V
V
(I
(Sine Wave, 60 Hz, R
(Sine Wave, 50 to 60 Hz)
Critical Damped Waveform Circuit
(I
Symbol
I
V
V
I
I
V
I
TM
PK
DRM
DRM
DRM
BO
H
TM
DRM
BO
TM
= 130 W, Pulse Width = 10 msec)
= 1 A Peak, Pulse Width
= 90 V
= 180 V
Parameter
Off State Leakage Current
Off State Repetitive Blocking Voltage
Breakover Voltage
Breakover Current
Holding Current
On State Voltage
Peak on State Current
BO
= 200 mA
L
= 100 W)
Characteristic
300 ms, Duty Cycle
Voltage Current Characteristic of SIDAC
C
= 25 C unless otherwise noted; Electricals apply in both directions)
MKP3V120, MKP3V240
(Bidirectional Device)
2%)
http://onsemi.com
MKP3V120
MKP3V240
MKP3V120
MKP3V240
2
Symbol
I
V
V
di/dt
DRM
I
R
BO
I
BO
TM
H
S
I
TM
I
H
+ Current
Min
110
220
0.1
R
-
-
-
-
-
S
I
+
V
DRM
TM
V
(V
DRM
(I
Typ
120
1.1
(BO)
S
-
-
-
-
-
-
– I
V
– V
S
(BO)
Slope = R
V
S
)
(BO)
)
Max
130
250
200
100
I
1.5
10
S
-
-
I
+ Voltage
(BO)
S
Unit
A/ms
mA
mA
mA
kW
V
V