2N5062 ON Semiconductor, 2N5062 Datasheet - Page 5
![SCRs 100V 800mA Thyristor](/photos/26/98/269840/to92_sml.jpg)
2N5062
Manufacturer Part Number
2N5062
Description
SCRs 100V 800mA Thyristor
Manufacturer
ON Semiconductor
Datasheet
1.2N5060RLRA.pdf
(7 pages)
Specifications of 2N5062
Breakover Current Ibo Max
10 A
Rated Repetitive Off-state Voltage Vdrm
100 V
Off-state Leakage Current @ Vdrm Idrm
0.01 mA
Forward Voltage Drop
1.7 V
Gate Trigger Voltage (vgt)
0.8 V
Maximum Gate Peak Inverse Voltage
5 V
Gate Trigger Current (igt)
0.2 mA
Holding Current (ih Max)
5 mA
Mounting Style
Through Hole
Package / Case
TO-92-3 (TO-226)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2N5062
Manufacturer:
MOTOROLA/摩托罗拉
Quantity:
20 000
Company:
Part Number:
2N5062G
Manufacturer:
ON
Quantity:
13 148
Company:
Part Number:
2N5062RLRA
Manufacturer:
ON
Quantity:
18 000
Company:
Part Number:
2N5062RLRAG
Manufacturer:
ON Semiconductor
Quantity:
226
Company:
Part Number:
2N5062RLRAG
Manufacturer:
ONSEMI
Quantity:
2 250
0.05
0.02
0.01
0.8
0.7
0.6
0.5
0.4
0.3
1.0
0.5
0.2
0.1
0.002
−75
-50
Figure 7. Typical Gate Trigger Voltage
0.005
-25
T
J
, JUNCTION TEMPERATURE (°C)
0.01
0
25
0.02
4.0
3.0
2.0
1.0
0.8
0.6
0.4
-75
50
V
R
-50
R
AK
GK
0.05
TYPICAL CHARACTERISTICS
L
= 7.0 V
= 100
75
= 1.0 k
Figure 9. Typical Holding Current
Figure 6. Thermal Response
-25
T
http://onsemi.com
J
100
, JUNCTION TEMPERATURE (°C)
0.1
110
t, TIME (SECONDS)
0
5
0.2
200
100
25
5.0
2.0
1.0
0.5
0.2
50
20
10
-75
2N5062‐64
50
2N5060,61
2N5060‐61
-50
0.5
Figure 8. Typical Gate Trigger Current
V
R
2N5062‐64
AK
R
GK
L
= 7.0 V
= 100
= 1.0 k
75
-25
T
J
, JUNCTION TEMPERATURE (°C)
1.0
100
110
0
2.0
25
50
5.0
V
AK
R
L
75
= 7.0 V
= 100
10
100
110
20