TISP3180 Bourns Inc., TISP3180 Datasheet - Page 11

• Manufacturer Part Number: TISP3180
• Description: Sidacs
• Manufacturer: Bourns Inc.

Specifications of TISP3180

• Breakover Current Ibo Max: 10 A
• Off-state Leakage Current @ Vdrm Idrm: 0.01 mA
• Forward Voltage Drop: 3 V
• Mounting Style: SMD/SMT
• Package / Case: SO-8
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

The protection voltage, (V (BO) ), increases under lightning surge conditions due to thyristor regeneration. This increase is dependent on the
rate of current rise, di/dt, when the TISP
be estimated by multiplying the 50 Hz rate V (BO) (250 V/ms) value by the normalized increase at the surge’s di/dt (Figure 7 ). An estimate of the
di/dt can be made from the surge generator voltage rate of rise, dv/dt, and the circuit resistance.
As an example, the ITU-T K.21 1.5 kV, 10/700 µs surge has an average dv/dt of 150 V/µs, but, as the rise is exponential, the initial dv/dt is
higher, being in the region of 450 V/µs. The instantaneous generator output resistance is 25 Ω. If the equipment has an additional series
resistance of 20 Ω, the total series resistance becomes 45 Ω. The maximum di/dt then can be estimated as 450/45 = 10 A/µs. In practice, the
measured di/dt and protection voltage increase will be lower due to inductive effects and the finite slope resistance of the TISP
region.
The off-state capacitance of a TISP
and the a.c. voltage, V d . All the capacitance values in this data sheet are measured with an a.c. voltage of 100 mV. The typical 25 °C variation
of capacitance value with a.c. bias is shown in Figure 16. When V D >> V d , the capacitance value is independent on the value of V d . The
capacitance is essentially constant over the range of normal telecommunication frequencies.
Off-state Capacitance
Protection Voltage
Capacitance
TISP31xxF3 (MV) Overvoltage Protector Series
®
device is sensitive to junction temperature, T J , and the bias voltage, comprising of the d.c. voltage, V D ,
®
device is clamping the voltage in its breakdown region. The V (BO) value under surge conditions can
1.05
1.00
0.95
0.90
0.85
0.80
0.75
0.70
1
Normalized to V
DC Bias, V
APPLICATIONS INFORMATION
NORMALIZED CAPACITANCE
V
d
RMS AC TEST VOLTAGE
- RMS AC Test Voltage - mV
D
= 0
10
d
Figure 16.
= 100 mV
vs
Customers should verify actual device performance in their specific applications.
100
AIXXAA
1000
Specifications are subject to change without notice.
MARCH 1994 - REVISED SEPTEMBER 2008
®
breakdown