C106D1 ON Semiconductor, C106D1 Datasheet - Page 4
C106D1
Manufacturer Part Number
C106D1
Description
SCRs 400V 4A
Manufacturer
ON Semiconductor
Datasheet
1.C106B.pdf
(6 pages)
Specifications of C106D1
Breakover Current Ibo Max
20 A
Rated Repetitive Off-state Voltage Vdrm
400 V
Off-state Leakage Current @ Vdrm Idrm
0.01 mA
Forward Voltage Drop
2.2 V
Gate Trigger Voltage (vgt)
0.8 V
Maximum Gate Peak Inverse Voltage
6 V
Gate Trigger Current (igt)
0.2 mA
Holding Current (ih Max)
3 mA
Mounting Style
Through Hole
Package / Case
TO-225-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
100
100
110
0.7
1.0
0.9
0.8
0.6
0.5
0.4
0.3
0.2
90
80
70
60
50
40
30
20
10
10
1
-40 -25
-45 -25
0
HALF SINE WAVE
RESISTIVE OR INDUCTIVE LOAD.
50 to 400 Hz
Figure 3. Typical Gate Trigger Current versus
Figure 5. Typical Gate Trigger Voltage versus
.4
I
T(AV)
Figure 1. Average Current Derating
-10
-10
.8
AVERAGE ON‐STATE CURRENT (AMPERES)
T
T
J
J
, JUNCTION TEMPERATURE (°C)
, JUNCTION TEMPERATURE (°C)
1.2
Junction Temperature
Junction Temperature
5
5
1.6
20
20
2.0
35
35
2.4
50
50
DC
2.8
65
65
3.2
80
80
http://onsemi.com
3.6
95
95
110
110
4.0
4
1000
1000
100
100
10
10
10
8
6
4
2
0
-40 -25
-40 -25
0
Figure 2. Maximum On−State Power Dissipation
HALF SINE WAVE
RESISTIVE OR INDUCTIVE LOAD
50 TO 400Hz.
.4
Figure 6. Typical Latching Current versus
Figure 4. Typical Holding Current versus
I
T(AV)
-10
-10
.8
AVERAGE ON‐STATE CURRENT (AMPERES)
T
T
J
J
, JUNCTION TEMPERATURE (°C)
Junction Temperature
, JUNCTION TEMPERATURE (°C)
Junction Temperature
1.2
5
5
1.6
20
20
JUNCTION TEMPERATURE ≈ 110°C
2.0
35
35
2.4
50
50
2.6
65
65
3.2
80
80
DC
3.6
95
95
110
110
4.0