MCR12D ON Semiconductor, MCR12D Datasheet - Page 2

• Manufacturer Part Number: MCR12D
• Description: SCRs 400V 12A
• Manufacturer: ON Semiconductor

Specifications of MCR12D

• Breakover Current Ibo Max: 100 A
• Rated Repetitive Off-state Voltage Vdrm: 400 V
• Off-state Leakage Current @ Vdrm Idrm: 0.01 mA
• Forward Voltage Drop: 2.2 V
• Gate Trigger Voltage (vgt): 1 V
• Gate Trigger Current (igt): 20 mA
• Holding Current (ih Max): 40 mA
• Mounting Style: Through Hole
• Package / Case: TO-220-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

2. Indicates Pulse Test: Pulse Width v 2.0 ms, Duty Cycle v 2%.
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
Thermal Resistance,
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds
Peak Repetitive Forward or Reverse Blocking Current
Peak Forward On−State Voltage (Note 2) (I
Gate Trigger Current (Continuous dc) (V
Holding Current (V
Latch Current (V
Gate Trigger Voltage (Continuous dc) (V
Critical Rate of Rise of Off−State Voltage
Repetitive Critical Rate of Rise of On−State Current
Symbol
V
I
V
I
V
I
(V
(V
IPK = 50 A, Pw = 40 msec, diG/dt = 1 A/msec, Igt = 50 mA
125
120
105
100
115
110
DRM
RRM
H
DRM
RRM
TM
95
90
D
D
= Rated V
= Rated V
0
1
Figure 1. Typical RMS Current Derating
I
T(RMS)
Parameter
Peak Repetitive Off State Forward Voltage
Peak Forward Blocking Current
Peak Repetitive Off State Reverse Voltage
Peak Reverse Blocking Current
Peak On State Voltage
Holding Current
2
DRM
D
DRM
D
= 12 V, I
, RMS ON−STATE CURRENT (AMPS)
= 12 V, Gate Open, Initiating Current = 200 mA)
, Exponential Waveform, Gate Open, T
and V
3
30°
Junction−to−Case
Junction−to−Ambient
4
G
RRM
= 20 mA)
5
; Gate Open)
60°
Characteristic
Characteristic
6
Voltage Current Characteristic of SCR
(T
D
D
7
J
= 12 V; R
= 12 V; R
90°
TM
= 25°C unless otherwise noted)
8
MCR12D, MCR12M, MCR12N
= 24 A)
9
L
L
180°
= 100 W)
=100 W)
10
http://onsemi.com
11
T
T
J
J
J
dc
= 125°C)
= 25°C
= 125°C
12
2
I
Reverse Avalanche Region
Anode −
RRM
Reverse Blocking Region
20
18
16
14
12
10
at V
8
6
4
2
0
0
RRM
(off state)
I
1
T(AV)
Figure 2. On−State Power Dissipation
, AVERAGE ON−STATE CURRENT (AMPS)
2
on state
Symbol
Symbol
3
I
R
R
I
dv/dt
DRM
V
V
di/dt
RRM
I
T
GT
I
qJC
qJA
I
TM
GT
H
L
+ Current
L
4
,
30°
5
Forward Blocking Region
I
H
Min
100
2.0
4.0
6.0
0.5
−
−
−
−
6
90°
V
TM
(off state)
7
Value
62.5
0.65
Typ
260
250
2.2
8.0
20
25
−
−
−
−
I
8
DRM
Anode +
180°
at V
9
Max
0.01
2.0
2.2
1.0
20
40
60
50
−
10
DRM
+ Voltage
11
°C/W
V/ms
A/ms
Unit
Unit
mA
mA
mA
mA
°C
dc
V
V
12