TGF2023-05 TriQuint, TGF2023-05 Datasheet
TGF2023-05
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TGF2023-05 Summary of contents
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... Defense & Aerospace • Broadband Wireless Product Description The TriQuint TGF2023- discrete 5.0 mm GaN on SiC HEMT which operates from DC-18 GHz. The TGF2023-05 is designed using TriQuint’s proven 0.25um GaN production process. This process features advanced field plate techniques to optimize microwave power and efficiency at high drain bias operating conditions ...
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... Table IV. Recommended Operating Conditions Symbol Vd Drain Voltage Idq Drain Current Id_Drive Drain Current under RF Drive Vg Gate Voltage TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com Table I Table II Parameter Apr 2011 © Rev D TGF2023-05 Value Notes - dBm 2/ 200 °C Value 500 mA 1500 mA -3 ...
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... GHz 6 GHz 10 GHz 79.3 81.9 61.5 0.524 0.348 0.426 153 171 72.1 0.426 0.372 0.414 Apr 2011 © Rev D TGF2023-05 14 GHz UNITS 41.6 dBm 39 % 6.1 dB 41.6 dBm GHz UNITS 49.9 Ω·mm 0.432 pF/mm 53.1 Ω·mm ...
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... Tbaseplate = 70 º 500 Tbaseplate = 70 º 1540 mA Pout = 43.9 dBm Pd = 19.0 W Tbaseplate = 70 ºC 30 Seconds Apr 2011 © Rev D TGF2023-05 Value Notes Tchannel = 200 º 1.5E+6 Hrs θjc = 4.0 (ºC/W) Tchannel = 126 º 6.4E+8 Hrs θjc = 4.0 (ºC/W) Tchannel = 146 º 1.0E+8 Hrs 320 º ...
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... Median Lifetime vs Channel Temperature TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com Apr 2011 © Rev D TGF2023-05 5 ...
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... Rdg Cdg + Rds Cds Vd=28V Idq=125mA Rg 0.78 Rs 0.13 Rd 1.28 gm 0.270 1.79 Ri 0.26 0.308 123.6 0.064 2.78 Ls 0.0058 Lg -0.013 Ld 0.018 8900 1730000 Apr 2011 © Rev D TGF2023- Drain Unit GaN cell (UGC) Reference Plane UNITS Ω Ω Ω Ω pF Ω Ω Ω 6 ...
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... Complete 5mm GaN HEMT Linear Model Includes 4 UGC, 5 vias, and 8 bonding pads Gate Pads TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com Drain Pads 2 4 .s8p file 6 8 Rp, Cp Apr 2011 © Rev D TGF2023-05 Γ_load 7 ...
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... Bond Pad #1, #2, #3, #4 Bond Pad #5 GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com Mechanical Drawing Vg Vd Apr 2011 © Rev D TGF2023-05 0.154 x 0.115 0.154 x 1.010 8 ...
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... GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com Assembly Notes Ordering Information Part ECCN 3A001.b.3.b Apr 2011 © Rev D TGF2023-05 Package Style GaN on SiC Die 9 ...