SIR422DP-T1-GE3 Vishay, SIR422DP-T1-GE3 Datasheet - Page 5

• Manufacturer Part Number: SIR422DP-T1-GE3
• Description: Various MOSFETs 40V 40A N-CH MOSFET
• Manufacturer: Vishay

Specifications of SIR422DP-T1-GE3

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 40V
• On Resistance Rds(on): 5400µohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To +150°C
• Transistor Case Style: SOIC
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation P
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 65025
S09-1336-Rev. A, 13-Jul-09
45
36
27
18
9
0
0
25
D
Power, Junction-to-Case
T
is based on T
C
50
- Case Temperature (°C)
75
J(max)
100
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
60
48
36
24
12
0
0
125
Package Limited
25
150
T
C
50
Current Derating*
- Case Temperature (°C)
75
100
2.5
2.0
1.5
1.0
0.5
0.0
0
125
25
Power, Junction-to-Ambient
150
T
A
- Ambient Temperature (°C)
50
75
Vishay Siliconix
100
SiR422DP
www.vishay.com
125
150
5