BLF6G27L-50BN,112 NXP Semiconductors, BLF6G27L-50BN,112 Datasheet - Page 8

• Manufacturer Part Number: BLF6G27L-50BN,112
• Description: RF MOSFET Power Single 65V 0.25Ohms
• Manufacturer: NXP Semiconductors

Specifications of BLF6G27L-50BN,112

• Mounting Style: SMD/SMT
• Resistance Drain-source Rds (on): 0.25 Ohms
• Transistor Polarity: N-Channel
• Configuration: Single
• Drain-source Breakdown Voltage: 65 V
• Package / Case: SOT-1112A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NXP Semiconductors
BLF6G27L-50BN_6G27LS-50BN
Product data sheet
Fig 11. 2-carrier W-CDMA ACPR at 5 MHz as a
ACPR
(dBc)
(1) f = 2500 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
5M
10
20
30
40
50
0
0
V
function of load power; typical values
DS
= 28 V; I
5
Dq
= 430 mA.
10
(1)
(2)
(3)
15
20
All information provided in this document is subject to legal disclaimers.
001aan491
P
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Rev. 2 — 7 April 2011
Fig 12. 2-carrier W-CDMA ACPR at 10 MHz as a
ACPR
(dBc)
(1) f = 2500 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
10M
10
20
30
40
50
60
0
V
function of load power; typical values
DS
= 28 V; I
BLF6G27L(S)-50BN
5
Dq
= 430 mA.
10
(1)
(2)
(3)
Power LDMOS transistor
15
© NXP B.V. 2011. All rights reserved.
20
001aan492
P
L
(W)
25
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